Texas Instruments Corporation

Texas Instruments Incorporated Deutschland, Gmbh

Leo Stroth

Robert H Havemann

Robert H Eklund

Jorg Naumann

Thomas Sharnagl

A method of forming an integrated circuit device including at least one polysilicon resistor,is disclosed herein. A polysilicon layer,is formed, possibly over a field oxide,. The polysilicon layer,is then doped to achieve a selected sheet resistance. An insulating layer,(e.g., an oxide, a nitride, or a combination thereof) is then formed over the polysilicon layer,. The insulating layer,is patterned and etched to define a resistor body,in the underlying polysilicon layer,. The polysilicon layer,is then patterned and etched to define first and second resistor heads,abutting the resistor body,while simultaneously at least one polysilicon element,of a second electronic device is formed. Other systems and methods are also disclosed.

Process of making polysilicon resistor

An integrated circuit device including at least one polysilicon resistor 10 is disclosed herein. A polysilicon layer 24 is formed, possibly over a field oxide 12. The polysilicon layer 24 is then doped to achieve a selected sheet resistance. An insulating layer 18 (e.g., an oxide, a nitride, or a combination thereof) is then formed over the polysilicon layer 24. The insulating layer 18 is patterned and etched to define a resistor body 14 in the underlying polysilicon layer 24. The polysilicon layer 24 is then patterned and etched to define first and second resistor heads 16 abutting the resistor body 14 while simultaneously at least one polysilicon element 28 of a second electronic device is formed. Other systems and methods are also disclosed.

Polysilicon resistor structure including polysilicon contacts

A method of forming an integrated circuit device including at least one polysilicon resistor 10 is disclosed herein. A polysilicon layer 24 is formed, possibly over a field oxide 12. The polysilicon layer 24 is then doped to achieve a selected sheet resistance. An insulating layer 18 (e.g., an oxide, a nitride, or a combination thereof) is then formed over the polysilicon layer 24. The insulating layer 18 is patterned and etched to define a resistor body 14 in the underlying polysilicon layer 24. The polysilicon layer 24 is then patterned and etched to define first and second resistor heads 16 abutting the resistor body 14 while simultaneously at least one polysilicon element 28 of a second electronic device is formed. Other systems and methods are also disclosed.

Resistor structure and process

A method is described of making an electrically programmable integrated circuit which comprises meltable contact bridges (22) between selected connecting points. In the method, firstly in a semiconductor substrate (10) by means of diffusion or ion implantation to obtain desired circuit functions a semiconductor structure with zones (12) of different conductivity type is formed. On the surface of the semiconductor structure a first protective layer (14) is formed in which contact windows (18) to the selected connecting points are then formed. On the surface of the first protective layer (14) and in the contact windoews (18) a through conductive layer (20) is made of a material forming the fusible contact bridges (22). Using a plasma etching method the conductive layer (20) is etched away so that only the contact bridges (22) with an associated connecting end (21) and conductor regions leading from the contact bridges (22) to the connecting points in the contact windows (18) remain. On the remaining conductor regions a second protective layer (24) is formed which is then etched away by means of a plasma etching method except for the regions lying over the contact bridges (22). In the region of the contact windows (18) and on the connecting ends (21) of the contact bridges (22) a connecting metallization (26, 28) is then applied.

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Wolfersdorf, Germany

Leo Stroth