Optical Communication Products, Inc.

Leo M F Chirovsky

Ryan Likeke Naone

Andrew William Jackson

Stewart A Feld

David Kisker

John Wasserbauer

Selectively oxidized vertical cavity lasers emitting at about 1290 nm using InGaAsN quantum wells that operate continuous wave below, at and above room temperature are reported. The lasers employ a semi-insulating GaAs substrate for reduced capacitance, high quality, low resistivity AlGaAs DBR mirror structures, and a strained active region based on InGaAsN. In addition, the design of the VCSEL reduces free carrier absorption of 1.3 &#x3bc;m light in the p-type materials by placing relatively higher p-type dopant concentrations near standing wave nulls.

Long wavelength vertical cavity surface emitting laser

A method of forming a vertical cavity surface emitting laser () includes process steps for self-aligning the p-type ohmic contact (), an oxide current aperture (), and a central puck of re-phase material () around the optical axis of the laser.

Method of self-aligning an oxide aperture with an annular intra-cavity contact in a long wavelength VCSEL

A method of forming a vertical cavity surface emitting laser ( ) includes process steps for self-aligning the p-type ohmic contact ( ), an oxide current aperture ( ), and a central puck of re-phase material ( ) around the optical axis of the laser.

A vertical cavity laser includes an optical cavity adjacent to a first mirror, the optical cavity having a semiconductor portion and a dielectric spacer layer. A dielectric DBR is deposited adjacent to the dielectric spacer layer. The interface between the semiconductor portion of the optical cavity and the dielectric spacer layer is advantageously located at or near a null in the optical standing wave intensity pattern of the vertical cavity laser to reduce the losses or scattering associated with that interface.

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Superior, CO, United States of America

Leo M F Chirovsky