Philips Lighting Holding B.v.

Rhodia Limited

Semiconductor Manufacturing International Corp.

Covidien LP

Rhodia Operations

Leo Liu

Rui Li

Allan Wang

Feng Pan

Adon Dd Wei

Lisa Mao

Johnson Zhang

Gary Woodward

Qi Tang

Jon D Kiplinger

Jianxin Ou

Allan He

Douglas Radtke

A method for identifying a liver in a CT image of a patient is provided. The method includes applying a liver model to the CT image. The method further includes extracting an internal liver region and an external liver region from the CT image based on the applied liver model. The method also includes performing a graph cut algorithm on the CT image based on the internal liver region and the external liver region to produce a liver image. The performing of the graph cut algorithm on the CT image to produce the liver image may be further based on an internal heart and/or kidney region and an external heart and/or kidney region. A non-transitory computer-readable storage medium encoded with a program is provided.

Organ segmentation method and system

Public lighting fixture

Road lighting luminaire

Various embodiments provide complementary metal-oxide-semiconductor (CMOS) devices and their fabrication methods. A semiconductor substrate is provided to include a first region to form a PMOS transistor and a second region to form an NMOS transistor. One of the first and second regions can include a metal gate structure having a metal top layer. The other of the first and second regions can include an interfacial oxide layer formed on a high-k dielectric layer. A surface of the metal top layer can be oxidized to form a metal oxide top layer covering the metal top layer. The metal oxide top layer and the interfacial oxide layer can be removed by wet etching. A metal gate can be formed on the high-k dielectric layer.

CMOS device and fabrication method

A transistor and a method for forming the transistor are provided. The transistor can be formed over a substrate including a first region and second regions on opposite sides of the first region. On the substrate, a first SiGe layer can be formed, followed by forming a first silicon layer on the first SiGe layer and forming a second SiGe layer on the first silicon layer. The second SiGe layer and the first silicon layer within the second regions are removed. The first silicon layer within the first region is removed to form a cavity such that the second SiGe layer is floated. An isolating layer is formed in the cavity. Second silicon layers are formed in the second regions. A gate structure is formed on the second SiGe layer within the first region and the second silicon layers are doped to form a source and a drain.

Transistor and method for forming the same

A method for making a (meth)acrylamide monomer, comprises reacting a (meth)acrylate ester with an amino-functional compound in an organic solvent in the presence of a transesterification catalyst.

Process for making a (meth)acrylamide monomer

A method for making a monomer having an ethylenically unsaturated group and two or more quaternary ammonium groups per molecule, comprising:

Process for making an acrylic monomer having one or more quaternary ammonium groups and its polymers

An improved process for production of dialkyldithiophosphinic acid including sulfurizing a purified dialkylphosphinic acid by: reacting a hypophosphorous acid or salt with a stoichiometric excess of an alpha olefin in the presence of a free radical initiator to form a reaction product comprising monoalkylphosphinic acid and dialkylphosphinic acid; adding sufficient aqueous base to the reaction product to i) form the salts of the phosphinic acids, and ii) establish an aqueous phase and an organic phase, wherein a monoalkylphosphinic acid solubilizes into an aqueous phase; separating the organic phase from the aqueous phase; acidifying the organic phase and removing the olefin from the organic phase; isolating the purified dialkylphosphinic acid product; and sulfurizing the purified dialkylphosphinic acid product to form a dialkydithiophosphinic acid. The present invention also provides a process for preparing purified dialkylthiophosphinic chloride, and a process for preparing purified dialkylmonothiophosphinic acids.

Process for the preparation of highly purified, dialkydithiophosphinic compounds

Growing community of inventors

Shanghai, China

Leo Liu