International Business Machines Corporation

Other

Leo L Linehan

Wayne Martin Moreau

Randolph J Smith

Gary T Spinillo

Harbans S Sachdev

James Thomas Fahey

Premlatha J Jagannathan

Robert Lavin Wood

Ranee W Kwong

Kevin Michael Welsh

Brian Wayne Herbst

Scott Arthur MacDonald

Willard E Conley

Judy B Dorn

John C Forster

Krishna Gandhi Sachdev

Hiroshi Ito

Gregory Breyta

K Paul Muller

Phillip Joe Brock

Ahmad D Katnani

John Patrick Hummel

Carlton G Willson

Daniel Joseph Dawson

Hubert Schlosser

Ronald Anthony DellaGuardia

Robert Neal Lang

Margaret C Lawson

Walter E Mlynko

Nicholas J Clecak

Andrew Robert Eckert

Erik A Puttlitz

James Patrick Collins

Kathleen H Martinek

Linda K Somerville

Steve S Muira

Kathleen M Cornett

William J Miller

Charlotte R DeWan

A photoresist composition for use in lithographic processes in the fabrication of semiconductor devices such as integrated circuit structures is disclosed. The photoresist composition includes a monomeric sensitizer bounding to a base-soluble long chain polymer.

Polymer-bound sensitizer

A co-polymer of benzophenone and bisphenol A has been shown to have DUV absorption properties. Therefore, the co-polymer has particular utility as an antireflective coating in microlithography applications. Incorporating anthracene into the co-polymer backbone enhances absorption at 248 nm. The endcapper used for the co-polymer can vary widely depending on the needs of the user and can be selected to promote adhesion, stability, and absorption of different wavelengths.

Antireflective coating for microlithography

Several mid UV photo acid generators (PAGs), a chemically amplified photo resist (CAMP), and method for improving nested to isolated line bias are provided. Similarly, photo speed may also be improved. Unlike conventional mid UV PAGs, the present invention's PAG compounds, resist composition, and method do not require a mid UV sensitizer. Specifically, PAGs are provided that bear a chromophore capable of receiving mid UV radiation, particularly I-line, and that are suitable for use in a chemically amplified photo resist having a photo speed of 500 mJ/cm.sup.2 or less, but preferrably 200 mJ/cm.sup.2 or less. For example, the PAGs can be a sulfonium or iodonium salt, such as anthryl, butyl, methyl sulfonium triflate and bis(4-t-butylphenyl)iodonium 9,10-dimethoxyanthracene sulfonate. The chromophore forming a part of the PAGs can be selected from polyaromatic hydrocarbons, for example, chrysenes, pyrenes, fluoranthenes, anthrones, benzophenones, thioxanthones, anthracenes, and phenanthrenes, but preferably anthracenes.

Photo acid generator compounds, photo resists, and method for improving

Method for patterning a photoresist material wherein an anti-reflective

A polyalkylmethacrylate co-polymer of polyhydroxystyrene has been found to be an ideal blending partner in a novolak photoresist composition. The preferred co-polymer is poly(p-hydroxystyrene)-co-(methyl methacrylate). The co-polymer is fully miscible with novolaks and has a high thermal stability (&gt;150.degree. C.).

Photoresist composition including polyalkylmethacrylate co-polymer of

Microbridge formation in chemically amplified negative tone photoresists based on poly(hydroxystyrene) (PHS) is avoided when the PHS is blended together with a co-polymer of PHS and an acrylic polymer such as poly(methyl methacrylate) (PMMA). The blend should include at least 10% by weight of the co-polymer. In operation, hydrogen bonding between the hydroxystyrene sub-units and the methacrylate sub-units decreases the availability of sites for crosslinking, and this reduction in crosslinking sites makes the blend less susceptible to formation of polymer resist microbridges. The invention is practicable with a polymers having a wide range of molecular weights (2000-50000 daltons), and development can be achieved using the industry standard 2.38 wt % trimethylammonium hydroxide (TMAH) developer without any adverse impact on the photoresist.

Composition for eliminating microbridging in chemically amplified

Dry developable top surface imageable photoresist compositions which comprise, in admixture, a film-forming aromatic polymer resin activated to electrophilic substitution, an acid catalyzable agent capable of being inserted into the aromatic polymer resin, and a radiation degradable acid generating compound and processes for generating positive tone resist images on substrates therewith.

Dry developable photoresist compositions and method for use thereof

A method for transferring a pattern through a photoresist layer in the fabrication of submicron semiconductor devices structures is disclosed. A photoresist is provided on a substrate and the same is imagewise exposed with a desired pattern to form exposed and unexposed patterned areas in the top surface of the photoresist. The photoresist is then baked to form cross-linked regions in the exposed pattern areas of the photoresist. Silylation is then performed to incorporate silicon into the unexposed patterned areas of the photoresist, wherein some incorporation of silicon occurs in the exposed patterned crosslinked areas of the photoresist. The patterned photoresist is subsequently etched using a high density, low pressure, anisotropic O.sub.2 plasma alone to produce residue-free images with vertical wall profiles in the photoresist. This method is particularly advantageous with RFI reactive ion etch systems.

Residue free vertical pattern transfer with top surface imaging resists

High sensitivity, high contrast, heat-stable resist compositions for use in deep UV, i-line e-beam and x-ray lithography. These compositions comprise a film-forming polymer having aromatic rings activated for electrophilic substitution, an acid catalyzable crosslinking agent which forms a hydroxy-stabilized carbonium ion, and a photoacid generator. The compositions are aqueous base developable.

Crosslinkable aqueous developable photoresist compositions and method

Viscosity stable, essentially gel-free linear polyamic acids are provided by a process utilizing offset stoichiometry. Polyimides formed from such polyamic acids have low TCE and low dielectric constants. Methods for improved adhesion of polyimides are also disclosed.

Viscosity stable, essentially gel-free polyamic acid compositions

Growing community of inventors

Walden, NY, United States of America

Leo L Linehan