Crystal Is, Inc.

Rensselaer Polytechnic Institute

Leo J Schowalter

Robert T Bondokov

Glen Alfred Slack

James R Grandusky

Kenneth E Morgan

Jianfeng Chen

Shawn Robert Gibb

Toru Kimura

Shawn R Gibb

Shailaja P Rao

Shichao Wang

Keisuke Yamaoka

Joseph A Smart

Craig Moe

Thomas Miebach

Takashi Suzuki

Juan Carlos Rojo

Shiwen Liu

Kosuke Sato

Ken Kitamura

Tomohiro Morishita

Yuting Wang

Masato Toita

Hironori Ishii

Sandra B Schujman

J Carlos Rojo

Mark C Mendrick

Muhammad Jamil

Steven Berger

Rajul Randive

Javier Martinez Lopez

Timothy J Bettles

James Davis

Sean P Branagan

Amy Wilson Miller

Christopher Scully

Jan Barani

Amy C Wilson Miller

Richard M Mariita

Glen A Stack

Carlos J Rojo

A system disinfects air. The system includes an elongated chamber having an inlet configured for air to flow into the chamber. The chamber also has an outlet configured for air to flow out of the chamber, and a sidewall formed from a material that is at least 90% UVC reflective. The chamber defines a longitudinal axis. A LED is positioned to emit UVC radiation in a direction substantially perpendicular to the longitudinal axis of the chamber. A filter is configured to trap pathogens. The filter is formed of a material that is UVC reflective and UVC transmissive.

Air disinfection chamber

In various embodiments, single-crystal aluminum nitride boules and substrates have low Urbach energies and/or absorption coefficients at deep-ultraviolet wavelengths. The single-crystal aluminum nitride may function as a platform for the fabrication of light-emitting devices such as light-emitting diodes and lasers. The single-crystal aluminum nitride boules may advantageously have diameters that increase along at least portions of their lengths.

Aluminum nitride crystals having low urbach energy and high transparency to deep-ultraviolet wavelengths

In various embodiments, aluminum nitride single crystals have large crystal augmentation parameters and may therefore be suitable for the fabrication of numerous, large single-crystal aluminum nitride substrates having high crystalline quality. The aluminum nitride single crystals may have large boule masses and volumes.

Aluminum nitride single crystals having large crystal augmentation parameters

A photoreactor for disinfecting water includes at least one wall defining a chamber configured to contain fluid. The reactor also includes an inlet through which water flows into the chamber, and an outlet through which water exits the chamber. The reactor also includes a UVC LED. The LED is configured to power on for an active duration, and power off for an inactive duration. The active duration and the inactive duration define a period. The reactor also includes a controller configured to set a duty cycle for the period, where the duty cycle is a ratio of the active duration to the period. The duty cycle is less than or equal to about 1:100.

Periodic UVC dosing

In various embodiments, device structures configured to emit ultraviolet light have lateral surfaces that form angles to the substrate normal of approximately the Brewster angle corresponding to the light-emitting portion of the device structure. The device structures may include one or more mesas disposed over a shared substrate or handle wafer.

Ultraviolet light-emitting devices having enhanced light output

In various embodiments, single-crystal aluminum nitride boules and substrates are formed from the vapor phase with controlled levels of impurities such as carbon. Single-crystal aluminum nitride may be heat treated via quasi-isothermal annealing and controlled cooling to improve its ultraviolet absorption coefficient and/or Urbach energy.

Impurity control during formation of aluminum nitride crystals and thermal treatment of aluminum nitride crystals

In various embodiments, controlled heating and/or cooling conditions are utilized during the fabrication of aluminum nitride single crystals and aluminum nitride bulk polycrystalline ceramics. Thermal treatments may also be utilized to control properties of aluminum nitride crystals after fabrication.

Thermal control for formation and processing of aluminum nitride

In various embodiments, single-crystal aluminum nitride boules and substrates are highly visibly transparent and have low Urbach energies and/or absorption coefficients at deep-ultraviolet wavelengths. The single-crystal aluminum nitride may function as a platform for the fabrication of light-emitting devices such as light-emitting diodes and lasers.

Aluminum nitride single crystals having controllable color and methods of forming them

In various embodiments, single-crystal aluminum nitride boules and substrates having high transparency to ultraviolet light and low defect density are formed. The single-crystal aluminum nitride may function as a platform for the fabrication of light-emitting devices such as light-emitting diodes and lasers.

Large, UV-transparent aluminum nitride single crystals

In various embodiments, single-crystal aluminum nitride boules and substrates have low Urbach energies and/or absorption coefficients at deep-ultraviolet wavelengths. The single-crystal aluminum nitride may function as a platform for the fabrication of light-emitting devices such as light-emitting diodes and lasers.

A fluid treatment system includes a reactor chamber fluidly coupled with a fluid inlet and a fluid outlet. The reactor chamber is defined by one or more chamber walls. The system includes a UV LED, and a light pipe. The light pipe extends into the reactor chamber through at least one of the chamber walls. The light pipe has a proximal end disposed outside of the reactor chamber. The proximal end is coupled with the UV LED to transmit UV light into the reactor chamber through the light pipe. To that end, the light pipe also has a distal end, opposite the proximal end, that is disposed within an interior volume of the reactor chamber. The light pipe includes a central section disposed between the proximal end and the distal end. The central section is configured to transmit the UV light from UV LED to the distal end.

Systems and methods for fluid disinfection with ultraviolet light

In various embodiments, a layer of organic encapsulant is provided over a surface of an ultraviolet (UV) light-emitting semiconductor die, and at least a portion of the encapsulant is exposed to UV light to convert at least some of said portion of the encapsulant into non-stoichiometric silica material. The non-stoichiometric silica material includes silicon, oxygen, and carbon, and a carbon content of the non-stoichiometric silica material is greater than 1 ppm and less than 40 atomic percent.

Photon extraction from ultraviolet light-emitting devices

A system for disinfecting fluid includes a plurality of fluid reactors. Each of the fluid reactors includes at least one UVC LED. The UVC LED includes an LED chip configured to emit UVC radiation and a package coupled with the LED chip. The LED chip has a top surface that defines a chip top surface area. The top surface is formed from a semiconductor material having an index of refraction. The fluid reactor has at least one wall that defines a chamber configured to contain the fluid. The at least one wall has an aperture configured to receive UVC radiation into the chamber. The aperture extends through the at least one wall. The aperture has an aperture area that is (1) smaller than a top surface area of the package and (2) equal to or larger than the chip top surface area.

Fluid treatment reactor

In various embodiments, growth of large, high-quality single crystals of aluminum nitride is enabled via a two-stage process utilizing two different crystalline seeds.

Two-stage seeded growth of large aluminum nitride single crystals

Growing community of inventors

Latham, NY, United States of America

Leo J Schowalter