Commissariat a L'energie Atomique Et Aux Energies Alternatives

Leo Bourdet

Maud Vinet

Louis Hutin

Yann-Michel Niquet

A method is described for controlling a spin qubit quantum device that includes a semiconducting portion, a dielectric layer covered by the semiconducting portion, a front gate partially covering an upper edge of the semiconducting portion, and a back gate. The method includes, during a manipulation of a spin state, the exposure of the device to a magnetic field B of value such that g&#xb7;&#x3bc;&#xb7;B&#x3e;min(&#x394;(Vbg)). The method also includes the application, on the rear gate, of an electrical potential Vbg of value such that &#x394;(Vbg)&#x3c;g&#xb7;&#x3bc;&#xb7;B+2|M|, and the application, on the front gate, of a confinement potential and an RF electrical signal triggering a change of spin state, with g corresponding to the Land&#xe9; factor, &#x3bc;corresponding to a Bohr magneton, &#x394; corresponding to an intervalley energy difference in the semiconducting portion, and Mcorresponding to the intervalley spin-orbit coupling.

Growing community of inventors

Saturargues, France

Leo Bourdet