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Lek K Len

Frederick M Mako

Richard Silberglitt

The present invention is a method of joining two materials by single pulse electron radiation. The method comprises the step of disposing a first material layer adjacent to a second material layer such that an interface is disposed therebetween. Then there is the step of irradiating the interface with a pulsed electron beam such that energy of the pulsed electron beam is selectively deposited in a narrow spatial region and localized at the interface to produce an effective joint between the first and second material layers in a single pulse. Preferably, before the irradiating step, there is the step of calculating an optimum temperature profile across the interface depending on electron energy, beam current density and pulse length of the pulsed electron beam. The electron energy of the pulsed electron beam is preferably in the range of 100 keV to 10 MeV. The pulsed electron beam current density is preferably in the range of 1-1000 A/cm.sup.2. The pulsed electron beam pulse length is preferably in the range of 100 nsec (10.sup.-7 seconds) to 100 .mu.sec (10.sup.-4 seconds). If desired, there can be interlayer materials disposed between the first and second materials.

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Bowie, MD, United States of America

Lek K Len