Motorola Corporation

Wolfspeed, Inc.

Nxp USA, Inc.

Freescale Semiconductor,inc.

Cree Gmbh

Macom Technology Solutions Holdings, Inc.

Lei Zhao

Anthony M Pavio

Fabian Radulescu

Jeffrey Kevin Jones

Michael E Watts

Basim H Noori

John C Estes

Rickey G Pastor

William John Thompson

Robert E Stengel

David E Bockelman

Abdulrhman M S Ahmed

Mario M Bokatius

Greg Durnan

The present disclosure relates to an RF amplifier device including an IC chip including at least one transistor formed on a substrate, at least one operational circuit formed on the substrate and electrically coupled to the transistor, and a port configured to electrically couple the at least one operational circuit with operational circuitry outside the IC chip to adjust operation of the operational circuitry.

Hybrid RF integrated circuit device

The present disclosure relates to a semiconductor device with isolation and/or protection structures. A semiconductor device can include a substrate, a first transistor and a second transistor, wherein the first transistor and the second transistor are formed on the substrate, and an isolation structure formed on the substrate. The isolation structure can be formed on the substrate between the first transistor and the second transistor. The isolation structure can be configured to isolate the first transistor and the second transistor.

Semiconductor device with isolation and/or protection structures

A transistor amplifier package includes a base, one or more transistor dies on the base, first and second leads coupled to the one or more transistor dies and defining respective radio frequency (RF) signal paths, and an isolation structure on the base between the respective RF signal paths. The isolation structure includes first and second wire bonds. The first and second wire bonds may have a crossed configuration defining at least one cross point therebetween. Related wire bond-based isolation structures are also discussed.

Die-to-die isolation structures for packaged transistor devices

The present disclosure relates to added isolation between transistors in a multiple path amplifier circuit. The multiple path amplifier circuit includes a substrate, a first transistor on the substrate in a first path, and a second transistor on the substrate in a second path. The multiple path amplifier circuit also includes at least one electrical connection associated with the first and the second transistors and positioned to at least partially extend between the first path and the second path.

Integrated doherty amplifier with added isolation between the carrier and the peaking transistors

In a transistor formed on a semiconductor die mounted on a substrate, where the transistor output is connected to a circuit on the substrate, a bond pad electrically connected to a transistor drain finger manifold extends less than the full length of the manifold. By controlling the length of the bond pad, the parasitic capacitance it contributes may be controlled. In applications such as a Doherty amplifier, this parasitic capacitance forms part of the quarter-wave transmission line of an impedance inverter, and hence directly impacts amplifier performance. In particular, by reducing the parasitic capacitance contribution from transistor output bond pads, the bandwidth of a Doherty amplifier circuit may be improved. At GHz frequencies and with state of the art transistor device feature sizes, concerns about phase mismatch between drain finger outputs are largely moot.

Reduced-length bond pads for broadband power amplifiers

An embodiment of an amplifier has a bandwidth defined by low and upper cutoff frequencies. The amplifier includes an input impedance matching circuit and a transistor. The transistor has a gate, a first current conducting terminal coupled to an output of the amplifier, and a second current conducting terminal coupled to a reference node. The input impedance matching circuit has a filter input coupled to an input of the amplifier, a filter output coupled to the gate of the transistor, and a multiple pole filter coupled between the filter input and the filter output. A first pole of the filter is positioned at a first frequency within the bandwidth, and a second pole of the filter is positioned at a second frequency outside the bandwidth. The input impedance matching circuit is configured to filter the input RF signal to produce a filtered RF signal at the filter output.

Broadband radio frequency power amplifiers, and methods of manufacture thereof

A bidirectional amplifier circuit includes first and second input ports, first and second output ports, a power amplifier, and first, second, third, and fourth filter circuits. The power amplifier includes at least first and second input terminals and first and second output terminals. The first filter circuit is coupled between the first input port and the power amplifier first input terminal. The second filter circuit is coupled between the second input port and the power amplifier second input terminal. The third filter circuit is coupled between the first output port and the power amplifier first output terminal. The fourth filter circuit is coupled between the second output port and the power amplifier second output terminal. Carrier waves of differing frequencies may be injected into the amplifier circuit first and second input ports, and transmitted from the first and second output ports. The configuration provides broadband operation with flat gain and high efficiency at the frequencies of each of the carrier waves.

Bidirectional distributed amplifier

A balun and transformer system ( ) is provided in which a balun ( ) is cascaded between two 4:1 impedance transformers ( ) to form a 16:1 broadband impedance transformation for push-pull amplifier applications ( ). The balun ( ) is configured in a Marchand configuration. The balun and transformers ( ) are formed with coupled lines realized with a very thin layer of ceramic. Additional coupling between the gap in the balun ( ) is achieved by an embedded capacitor ( ) built in the balun's ceramic. DC bias supply ( ) to the power amplifier ( ) is achieved by using the hot plate of decoupling capacitors ( ), which serve as a floating ground plane to the whole application ( ).

Broadband balun and impedance transformer for push-pull amplifiers

A constant &ldquo;R&rdquo; network distributed amplifier formed in a multi-layer, low temperature co fired ceramic structure comprises multiple cascaded constant &ldquo;R&rdquo; networks for amplifying a signal applied thereto. Each one of the multiple cascaded constant &ldquo;R&rdquo; networks is formed in the ceramic structure and includes a plurality of ceramic layers each of which have a top and bottom planar surfaces which, when bonded together form the ceramic structure. A transmission line is formed on the top surfaces of each of the ceramic layers having a beginning end and a distal end and has a generally rectangular shape. The distal end of the transmission line formed on a lower ceramic layer is connected to the beginning end of the transmission line formed on the next adjacent upper ceramic layer by way of vias formed in the ceramic layers through which metal conductive material is formed there through. The transmission lines and the capacitance established between the individual layers form a LC structure. An output is provided at the middle portion of the transmission line formed on the middle ceramic layer that is coupled to the drain of a FET.

Tapered constant &ldquo;R&rdquo; network for use in distributed amplifiers

A broadband impedance matching integrated circuit apparatus comprising an alternating current ground plane, a direct current ground plane positioned proximate to the alternating current ground plane, a first conductive transmission line positioned a distance from the alternating current and direct current ground planes, a dielectric material layer with a thickness positioned on the first conductive transmission line, a second conductive transmission line positioned on the dielectric material layer wherein the first and second conductive transmission lines are electrically interconnected to behave as an electromagnetically coupled tapped autotransformer.

Broad band impedance matching device with coupled transmission lines

An electronic control circuit for a voltage variable capacitor, the electronic control circuit comprising a plurality of voltage variable capacitors, a plurality of resistors, and a plurality of variable electrical power sources wherein the plurality of voltage variable capacitors, the plurality of resistors, and the plurality of variable electrical power sources are electrically interconnected to form an electronic bias circuit for adjusting a capacitance of the plurality of voltage variable capacitors.

Voltage variable capacitor with improved C-V linearity

A stripline integrated circuit apparatus comprising a first ground plane, a stripline section positioned on the first ground plane, the stripline section including N stripline regions where N is a whole number greater than or equal to one, wherein each stripline region includes a stripline sandwiched therebetween a first dielectric layer with a thickness and a second dielectric layer with a thickness where each adjacent stripline is connected in parallel, wherein each adjacent stripline region is separated by a ground plane, a second ground plane positioned on the stripline region, and wherein the plurality of stripline sections are formed and electrically connected in series. The distances between the striplines and the ground planes are adjusted to vary the input and output impedance.

Broad band impedance matching device with reduced line width

A hybrid low voltage distributed power amplifier structure ( ) provides improved efficiency by forming drain transmission line inductors ( ) on a substrate ( ) while the rest of the amplifier is built in IC form ( ). A wirebond interconnection ( ) is made between the IC's drainline capacitors ( ) and the substrate's drainline inductors ( ) which are a higher impedance point in the circuit. As a result, the wirebond inductance becomes negligible and has little or no impact on the power amplifier's performance.

Hybrid structure for distributed power amplifiers

Methods and apparatus ( ) of amplifying a telecommunication signal ( ) are provided in accordance with the present invention. The apparatus ( ) comprises an input transmission line ( ) configured to receive the telecommunication signal ( ), an output transmission line ( ) configured to provide an amplified output of the telecommunication signal ( ) and N amplifier sections ( ) having a transistor ( ) connected to the input transmission line ( ) and the output transmission line ( ). The apparatus ( ) further comprises a waveform controller ( ) connected to the transistor and also configured to identify a signal level of the telecommunication signal The waveform controller 84 is further configured to generate an independent biasing voltage for the transistor such that the at least one of the N amplifier sections ( ) is configured for active operation and non-active operation based at least in part upon an evaluation of the signal level and an output power of the apparatus is reduced without a substantial degradation in an efficiency of the apparatus.

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Chandler, AZ, United States of America

Lei Zhao