The South China University of Technology

Shenzhen China Star Optoelectronics Technology Co., Ltd.

Infinitus (china) Company Ltd.

Safekey Engineering Technology (zhengzhou), Ltd.

Tencent Technology (shenzhen) Company Limited

Zte Corporation

Guangdong Oppo Mobile Telecommunications Corp., Ltd.

Shenzhen China Star Optoelectronics Semiconductor Display Technology Co., Ltd.

Shenzhen Lanhe Technologies Co., Ltd.

Zhengzhou University

Welead Infrastructure Engineering Technology (zhengzhou), Ltd.

Infrastructure Renewal Institute of Southern China

Huawei Technologies Co., Limited

Huawei Device Co., Ltd.

Shenzhen Rock Times Technology Co., Ltd.

Lei Wang

Hui Jin

Hong Tao

Weijing Wu

Wei Yu

Wenmei Gao

Jian Yang

Xi Chen

Shunan Fan

Junbiao Peng

Miao Xu

Hua Xu

Yu Wu

Hongyuan Fang

Chang Liu

Haibin Zheng

Ting Dong

Guoqiao Chen

Min Li

Peng Zhao

Yanhui Pan

Qingtao Tang

Hongmeng Li

Jianhua Zou

Ruiqi He

Fuming Wang

Rui Li

Haijun Wu

Li Li

Guodong Xue

Bin Li

Huiping Zhang

Hongwei Zhao

Lei Zhou

Zhiguo Zhang

Chengchao Guo

Zhijun Liang

Yinfeng Zhang

Xiaodong Chen

Churong Tang

Qi Liu

Jinbo Li

Bing Zhao

Ke Yang

Fei Cheng

Qiang Li

Weifeng Chen

Peiran Qin

Mingrui Du

Zikai Chen

Shuxin Zhang

Chao Zhang

Haisong Qiu

Yong Huang

Ling Zhu

Yankai Gao

Yongqiang Zou

Lijun Fang

Binlin Deng

Haojian Xie

Jian Hua Zou

Guobin Qiao

Hui Liu

Bo Gong

Qinghua Wu

Lianghong Zhu

Wenduan Qi

Jiangfeng Shang

Manjun Li

Kangjian Yang

XiaoLi Wu

Shengyu Dong

Haoping Wang

Shenghui Li

Taifu Que

Ye He

Shaopeng Yang

Wencong Liu

Dayong Zhao

Zhiqiang Zheng

Guozhi Xu

Xiubin Wu

Shengliang Hu

HongJia Zhang

Enze Zhou

Xiaoguang Zheng

Xiang Tian

Ruizeng Wei

Shuqin Liu

Guoxiong Cheng

Zhangquan Rao

Qiangbing Zeng

Xinyun Pan

Shuisheng Zheng

WeiFang Xi

Shoumin Chan

Haisheng Lu

Canbin Huang

Case for mobile phone

A silicate-modified polymer grouting material for leakage plugging is provided, which belongs to the technical field of silicate modification, includes 60% by weight of silicate-modified aqueous solution component, and about 40% of structural flame-retardant isocyanate. According to the proportion of the main total amount, the main components are classified into inorganic components, so the silicate-modified polymer grouting material for leakage plugging has excellent flame retardant performance, oxygen index ≥35%, adhesion ≥1.5 mPa, maximum reaction temperature ≤95° C., odor level (80° C.) ≤3.5, fog test ≤5 mg (without physical additive flame retardants diffusion to the environment). In particular, a main component of the silicate-modified aqueous solution, endows it with good surface resistance.

Silicate-modified polymer grouting material for leakage plugging

Disclosed are a three-dimensional wildfire monitoring and control system and method for a power transmission corridor. The system includes: a wildfire-induced trip risk assessment module, for assessing, when a wildfire is detected in a power transmission corridor, a wildfire-induced trip risk in real time so as to determine whether to issue a wildfire warning; an online wildfire monitoring device layout planning module, for generating an online wildfire monitoring device layout plan for transmission lines based on the wildfire-induced trip risk, a blind spot of satellite monitoring and importance levels of the transmission lines; and a three-dimensional power transmission corridor wildfire monitoring and warning module, adopting multi-source satellites and drones, and realizing three-dimensional wildfire monitoring of the power transmission corridor by monitoring through online wildfire monitoring devices provided according to the layout plan, the multi-source satellites and the drones.

Three-dimensional wildfire monitoring and control method and system for power transmission corridor

Provided are a display panel and a display device. The display panel includes at least two display units. Each display unit includes a substrate, a flexible substrate, a light-emitting unit circuit layer and at least one driver chip. The rigid substrate includes a display bearing region and a splicing region located on at least one side of the display bearing region. The flexible substrate is located on a first surface of the rigid substrate and located in the display bearing region, and the flexible substrate at least partially extends out of the display bearing region of the rigid substrate. The light-emitting unit circuit layer is located on a surface of one side of the flexible substrate away from the rigid substrate and includes at least one bonding pad.

Display panel and display device

A display screen frequency conversion method, a DDIC chip, and a terminal are provided. The method includes: outputting a Tearing Effect (TE) signal to an Application Processor (AP) at a first base frame rate, and performing an image scanning and a frame compensating at the first base frame rate; receiving a frequency reducing instruction issued by the AP, wherein the frequency reducing instruction is configured to instruct to reduce a base frame rate of the display screen; and outputting the TE signal to the AP at a second base frame rate based on the frequency reducing instruction and continually performing the image scanning and the frame compensating at the first base frame rate, wherein the second base frame rate is less than the first base frame rate.

Display screen frequency conversion method, DDIC chip, and terminal

Wireless charger

The present disclosure discloses a PEX-A pipe, the pipe wall of the PEX-A pipe includes a PEX-A antibacterial layer, a PEX-A main body layer, and an anti-ultraviolet (UV) layer that are sequentially attached from inside to outside. The anti-UV layer is attached to the outer side of the PEX-A main body layer to enhance the weather resistance and aging resistance and prolong the service life of the pipe. The PEX-A antibacterial layer is attached to the inner side of the PEX-A main body layer to inhibit the growth and reproduction of bacteria in water in the pipe and improve the quality of drinking water.

Cross-linked polyethylene type a (PEX-A) pipe

A method, apparatus, device, and a storage medium for upgrading a vehicle-mounted Tbox, which relate to the technical field of vehicle-mounted Tbox. The method comprises: when using a BOOTLOADER1 module that is used to store a power-on initial code for power-on startup, a vehicle-mounted Tbox determines whether version upgrading needs to be carried out (S); and when it is determined that version upgrading needs to be carried out, the vehicle-mounted Tbox sequentially carries out version upgrading on a BOOTLOADER2 module for storing control logic and a diagnostic protocol stack code and app module (S).

Method, apparatus, device, and storage medium for upgrading vehicle-mounted Tbox

The present application discloses a composite metal oxide semiconductor which is a metal oxide semiconductor doped with a rare earth oxide. Even doping the praseodymium oxide or ytterbium oxide at a small doping amount, oxygen vacancies could be suppressed as well as the mobility be maintained; critically, the thin-films made thereof can avoid the influence of light on I-V characteristics and stability, which results in great improvement of the stability under illumination of metal oxide semiconductor devices. The present application also disclose the thin-film transistors made thereof the composite metal oxide semiconductor and its application.

Composite metal oxide semiconductor and thin-film transistor made therefrom and its application

Refrigerator

A structural flame retardant high strength low exothermic polymer grouting material for consolidating, belonging to a technical field of polyurethane material, is produced by combined the polyether polyol and the modified isocyanate in a weight ratio of 100:(100-160), leading to internal reaction temperature ≤100° C., strength ≥60 mPa, bonding ≥3 mPa, oxygen index ≥28% while no halogen and no effect on water quality, odor level (80° C.) ≤3.5, and fog test ≤5 mg (which means no physical additive flame retardant is diffused into the environment). In particular, with no halogen, which is known as environmental hormones, in the plasticizers, there will be less combustion smoke, wherein the present invention will not release corrosive or irritating hydrogen halide gas, nor produce toxic carcinogens polybrominated benzoxins and polybrominated dibenzofurans, thereby avoiding the long-term impact of the material on the environment.

Structural flame retardant high strength low exothermic polymer grouting material for consolidating

Provided are a method for preparing an organic electroluminescent device, an organic electroluminescent device and a display apparatus. The method for preparing the organic electroluminescent device includes: providing a substrate; forming, on the substrate, a red light reflective electrode located in a red sub-pixel preparation region, a green light reflective electrode located in a green sub-pixel preparation region, and a blue light reflective electrode located in a blue sub-pixel preparation region; forming a transparent insulating layer on a surface of a side of the red light reflective electrode facing away from the substrate, where the area of the transparent insulating layer is smaller than the area of the red light reflective electrode; and forming a transparent conductive layer on a surface of a side of the transparent insulating layer facing away from the substrate, a surface of the side of the red light reflective electrode facing away from the substrate and not covered by the transparent insulating layer, and a surface of a side of the green light reflective electrode facing away from the substrate.

Method for preparing organic electroluminescent device, and organic electroluminescent device and display apparatus

The present application discloses a doped metal oxide semiconductor which is an indium tin oxide or indium tin zinc oxide semiconductor doped with a rare earth oxide. Even at a small doping amount, the oxygen vacancies could be suppressed as well as the mobility be maintained; critically, the thin-films made thereof can avoid the influence of light on I-V characteristics and stability, which results in great improvement of the stability under illumination of metal oxide semiconductor devices. The present application also discloses the thin-film transistors made thereof the doped metal oxide semiconductor and its application.

Doped metal oxide semiconductor and thin-film transistor made therefrom and its application

Power supply unit universal

The present application discloses an oxide semiconductor thin-film and a thin-film transistor consisted thereof. The oxide semiconductor thin-film is fabricated by doping a certain amount of rare-earth oxide (RO) as light stabilizer to metal oxide (MO) semiconductor. The thin-film transistor comprising a gate electrode, a channel layer consisted by the oxide semiconductor thin-film, a source and drain electrode; the thin-film transistor employing etch-stop structure, a back-channel etch structure or a top-gate self-alignment structure.

Oxide semiconductor thin-film and thin-film transistor consisted thereof

Growing community of inventors

Guangdong, China

Lei Wang