Chinese Academy of Sciences

Yangtze Memory Technologies Co., Ltd.

Nari Group Corporation

Wuhan Nari Limited Liability Company of State Grid Electric Power Research Institute

Lei Shi

Zhuqin Duan

Jialiang Deng

Yong Liu

Bo Li

Wenliang Zhu

Hongchao Liu

Zhongmin Liu

Youming Ni

Yanlan Liu

Yuesong Pan

Xin Zhou

Xianping Sun

Maili Liu

Chaohui Ye

Yu Nie

Youyi Shi

Cheng Tang

Jiangang Deng

Zhenbo Lan

Zhuolin Xu

You Song

Lei Ke

Qiang Sun

Qianwen Zhou

Qian Ma

Haoxin Li

Yeqing Han

Kaikai Gu

Yakai Peng

Youming In

Jun Fu

Hao Zhan

Zongmin Liu

Yu Xu

Yuefei Mao

In certain aspects, a memory device includes an array of memory cells, including a first memory cell and a second memory cell, and a peripheral circuit. The peripheral circuit includes a page buffer circuit and control logic. The control logic is configured to suspend a program operation on the first memory cell responsive to receiving a suspension command indicative of executing a read operation on the second memory cell, control the page buffer circuit to release a sensing storage unit and a cache storage unit of the page buffer circuit from being occupied by a suspension of the program operation through a usage of a dynamic storage unit of the page buffer circuit during the suspension of the program operation, and initiate a read operation on the second memory cell using the sensing storage unit and the cache storage unit.

Memory device and read operation during suspension of program operation thereof

In certain aspects, a memory device includes an array of memory cells and a peripheral circuit. The array of memory cells includes a first memory cell and a second memory cell. The peripheral circuit includes a page buffer circuit and control logic. The page buffer circuit is coupled to the first and second memory cells, respectively, and includes a sense out (SO) node and a cache storage unit. The control logic is coupled to the page buffer and configured to suspend a program operation on the first memory cell responsive to receiving a suspension command indicative of executing a read operation on the second memory cell. The control logic is further configured to control the page buffer circuit to store suspended program information associated with a suspension of the program operation, and initiate the read operation on the second memory cell through the SO node and the cache storage unit.

A method for developing an epoxy resin impregnated glass fiber Direct Current (DC) bushing, comprising: according to length parameters of each layer of capacitive screen or resistive screen designed depending on insulation requirements, selecting bushing design parameters, determining a winding machine program according to the bushing design parameters, and winding a core body according to the winding machine program, wherein during the core body winding process, the core body begins to be initially cured; after the core body is wound, curing the core body by an oven according to a preset oven temperature and duration; machining the cured core body according to a preset core body design drawing; after the inner wall of a flange is polished and cleaned and is heated and pretreated by the oven, injecting glue at the position of a glue injection hole of the flange for gluing the core body and the flange; sequentially assembling a collector ring, a hollow composite insulator, and a voltage-equalizing sealing cover on the glued core body, and mounting a conducting rod, a wiring board, and a voltage-equalizing ball; and performing various tests on the bushing according to a preset bushing standard for a DC system.

Method for developing epoxy resin impregnated glass fiber DC bushing

A memory device includes N memory planes (N is an integer greater than 1), M asynchronous multi-plane independent (AMPI) read units (M is an integer smaller than or equal to N), a first microcontroller unit (MCU), and a multiplexing circuit coupled to the N memory planes, the first MCU, and the M AMPI read units. Each AMPI read unit is configured to provide an AMPI read control signal for a respective memory plane to control an AMPI read operation on the respective memory plane. The first MCU is configured to provide a non-AMPI read control signal for each memory plane to control a non-AMPI read operation on each memory plane. The multiplexing circuit is configured to, in a non-AMPI read operation, direct a non-AMPI read control signal to each memory plane from the first MCU, and in an AMPI read operation, direct each AMPI read control signal of M AMPI read control signals to the respective memory plane from the corresponding AMPI read unit.

Memory device and asynchronous multi-plane independent read operation thereof

In certain aspects, a method for operating a memory device is disclosed. The memory device includes a plurality of memory planes. Whether an instruction is an asynchronous multi-plane independent (AMPI) read instruction or a non-AMPI read instruction is determined. In response to the instruction being an AMPI read instruction, an AMPI read control signal is generated based on the AMPI read instruction, and the AMPI read control signal is directed to a corresponding memory plane of the memory planes. In response to the instruction being a non-AMPI read instruction, a non-AMPI read control signal is generated based on the non-AMPI read instruction, and the non-AMPI read control signal is directed to each memory plane of the memory planes.

In certain aspects, a method for operating a memory device is disclosed. The memory device includes memory planes and multiplexers (MUXs). Each MUX includes an output coupled to a respective one of the memory planes, a first input receiving a non-asynchronous multi-plane independent (AMPI) read control signal, and a second input receiving an AMPI read control signal. Whether an instruction is an AMPI read instruction or a non-AMPI read instruction is determined. In response to the instruction being an AMPI read instruction, an AMPI read control signal is generated based on the AMPI read instruction, and a corresponding MUX is controlled to enable outputting the AMPI read control signal from the second input to the corresponding memory plane. In response to the instruction being a non-AMPI read instruction, a non-AMPI read control signal is generated based on the non-AMPI read instruction, and each MUX is controlled to enable outputting the non-AMPI read control signal from the respective first input to the respective memory plane.

The present invention provides a method for preparing acrylic acid and methyl acrylate. The method comprises passing the feed gas containing dimethoxymethane and carbon monoxide through a solid acid catalyst to generate acrylic acid and methyl acrylate with a high conversion rate and selectivity at a reaction temperature in a range from 180 to 400 and a reaction pressure in a range from 0.1 MPa to 15.0 MPa, the mass space velocity of dimethoxymethane in the feed gas is in a range from 0.05 hto 10.0 h, and the volume percentage of dimethoxymethane in the feed gas is in a range from 0.1% to 95%.

Method for preparing acrylic acid and methyl acrylate

An inert gas nucleus channel device comprising a magnetic resonance control system, a radio frequency generator, an RF amplifier and AD converter, a frequency synthesizer, a first mixer, a second power amplifier, a second T/R switch, an inert gas nucleus coil, a second pre-amplifier and a second mixer. A magnetic resonance imaging method is also disclosed. The method controls an increase or decrease in a frequency of a pulse or echo signal excited by a radio-frequency signal, implementing magnetic resonance imaging using hyperpolarized inert gases (such as xenon, helium, and krypton), making it possible to apply MRI to lungs and brains using the hyperpolarized inert gases, and expanding the probing range of MRI. The inert gas nucleus channel device is simple in structure and easy to operate and upgrades a hydrogen nucleus magnetic resonance imaging instrument to become a multi-nuclei MRI system using the hyperpolarized inert gases.

Device having inert gas nucleus channel and method for magnetic resonance imaging using the same

The present invention provides a method for directly preparing glycol dimethyl ether and co-producing ethylene glycol from ethylene glycol monomethyl ether. More specifically, the method comprises passing a feedstock containing a raw material of ethylene glycol monomethyl ether and a carrier gas through a reactor loaded with a solid acid catalyst to produce glycol dimethyl ether and ethylene glycol, at a reaction temperature range from 40&#xb0; C. to 150&#xb0; C. and a reaction pressure range from 0.1 MPa to 15.0 MPa; wherein a carrier gas is an optional inactive gas; and the feedstock contains water whose volume concentration in the feedstock is in a range from 0% to 95%; and the weight hourly space velocity of the raw material of ethylene glycol monomethyl ether is in a range from 0.05 hto 5.0 h; and the volume concentration of the raw material of ethylene glycol monomethyl ether in the feedstock is in a range from 1% to 100%; and the volume concentration of the carrier gas in the feedstock is in a range from 0% to 99%. In the method of the present invention, using a solid acid as a catalyst and ethylene glycol monomethyl ether as a raw material, under a low temperature condition, glycol dimethyl ether and ethylene glycol are prepared directly with high selectivity; moreover, there is substantially or completely no production of by-product 1,4-dioxane that causes pollution to the environment and is harmful to the human body or animal bodies.

Method for directly preparing glycol dimethyl ether and co-producing ethylene glycol from ethylene glycol monomethyl ether

The present invention provides a method for preparing acetic acid by carbonylation of methanol, which comprises: passing a raw material containing methanol, carbon monoxide and water through a reaction region loaded with a catalyst containing an acidic molecular sieve with an adsorbed organic amine, and carrying out a reaction under the following conditions to prepare acetic acid. The method in the present invention offers high acetic acid selectivity and good catalyst stability. The catalyst in the present invention does not contain noble metals such as rhodium or iridium, and does not need additional agent containing iodine, and thus does not generate a strong corrosive hydroiodic acid and the like.

Method for preparing acetic acid by carbonylation of methanol

This invention provides a method for preparing ethylene glycol by hydrolyzing ethylene glycol monomethyl ether. The method comprises passing a fresh raw material containing ethylene glycol monomethyl ether and water through a reaction zone loaded with a solid acid catalyst to react under the following conditions; separating the reacted mixture via a separation system to obtain a target product of ethylene glycol, by-products containing methanol, dimethyl ether and ethylene glycol-based derivatives, and an unreacted raw material containing ethylene glycol monomethyl ether and water; passing the target product of ethylene glycol into a product collection system; and passing methyl alcohol and dimethyl ether in the by-products into a by-product collection system; and after being mixed with the fresh raw materials containing ethylene glycol monomethyl ether and water, the ethylene glycol-based derivatives in the by-products and the unreacted raw material containing ethylene glycol monomethyl ether and water being recycled into the reaction zone, to realize the preparation of ethylene glycol by hydrolyzing ethylene glycol monomethyl ether. This invention provides a new process to realize the preparation of ethylene glycol by hydrolyzing ethylene glycol monomethyl ether. And in the method, the catalyst has long life and good stability.

Method for preparing ethylene glycol by hydrolysing ethylene glycol monomethyl ether

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Wuhan, China

Lei Shi