Suzhou Oriental Semiconductor Co., Ltd.

Ankon Medical Technologies (Shanghai) Co., Ltd.

Jiangsu Hansoh Pharmaceutical Group Co., Ltd.

Nr Electric Co., Ltd

Nr Engineering Co., Ltd

Shanghai Hansoh Biomedical Co., Ltd.

Citrix Systems, Inc.

Nr Electric Power Electronics Co., Ltd.

Jiangsu University

Nanjing University

Chia Tai Tianqing Pharmaceutical Group Co., Ltd.

China International Marine Containers (Group) Co., Ltd.

Anx IP Holding Pte. Ltd.

Cimc Enric Investment Holdings (Shenzhen) Co., Ltd.

Nanjing Chervon Industry Co., Ltd.

Lei Liu

Xiaodong Duan

Dezhong Yang

Wei Liu

Wei Li

Yi Gong

Yuanlin Yuan

Rui Wang

Zhendong Mao

Rudi Bao

Pengfei Wang

Taixun Fang

Min Li

Peng Gao

Xiang Zhang

Fan Yang

Xin Wang

Shaobao Wang

Zhao Li

Guangjun Sun

Fengfeng Ding

Yi Shi

Haiying Li

Lei Zhang

Shaobang Zhang

Rui Zhao

Xi Lin

Junya Duan

Qian Wang

Zheng Geng

Ping Dong

Pingbo Shi

Chihan Chen

Minzhi Lin

Zhongke Chen

Fuping Liu

Fujun Zhang

Songliang Tan

Weidong Shen

Jie Wang

Xiongxiong He

Weiming Pan

Yeping Liu

Wenhua Xiu

Feng Gu

Xinran Wang

Taotao Li

Chuanhui Huang

Pingan Jiang

Dongbin Lu

Biao Gao

Yingdian Xiang

Yongjiang Yu

Xiuyan Sun

Yan Dong

Cao Lei

Guangtai Zhang

Lele Li

Shengfu Gao

Peipei Zhang

Chen Zhou

Pengfei Xu

Weifeng Chen

Binjie Song

Yunkai Zhang

Xiaofeng Ju

Jianbing Gao

Dongli Zhai

Shijun Zhao

Xichuan Liu

Taichang Gao

Yulin Wang

Zhiqiang Li

Zhongyu Liu

Huiliang Zhang

Hua Huang

Lei Wang

Zhongxi An

Yunying Jiang

A super junction semiconductor power device includes an n-type drain region, an n-type drift region, multiple p-type columns, a gate structure, and multiple JFET regions. The width of each of the multiple p-type columns is equal. The spacing between two adjacent p-type columns is equal. The tops of the multiple p-type columns are provided with multiple p-type body regions respectively, and the p-type body regions are in one-to-one correspondence with the p-type columns. The widths of the multiple p-type body regions are equal. An n-type source region is provided in each p-type body region. The gate structure is configured to control a current channel between the n-type source region and the n-type drift region to turn on and turn off. The multiple JFET regions are located on the n-type drift region and between adjacent p-type body regions. The multiple JFET regions are provided with at least two different widths.

Super junction semiconductor power device

An IGBT device includes an p-type collector region, an n-type semiconductor layer, several p-type body regions located in the n-type semiconductor layer, a gate trench located in the n-type semiconductor layer and between adjacent p-type body regions, a gate trench located in the n-type semiconductor layer and between adjacent p-type body regions, a shielded gate located in a lower part of the gate trench, and a gate located in an upper part of the gate trench. The gate, the shielded gate, and the n-type semiconductor layer are insulated and isolated from each other. Among the several p-type body regions, at least one p-type body region has a first doping concentration and is defined as a first p-type body region, and at least one p-type body region has a second doping concentration and is defined as a second p-type body region.

Insulated gate bipolar transistor device

A large-area, uniform, and continuous films of bi-layer transition metal dichalcogenide (TMDC) and preparation method comprises that the bi-layer TMDC continuous films are grown on a substrate through the merging of bi-layer domains; the top and bottom layers of the bi-layer domains have equal size and grow synchronously, which guarantees uniformity of the bi-layer films; the bi-layer domains were nucleated at the surface steps of the substrate which require a height no less than 0.8 nm; the bi-layer TMDCs films include molybdenum disulfide, tungsten disulfide, molybdenum diselenide, and tungsten diselenide, and the size of the bi-layer TMDC films reaches centimeter-level and above, limited only by the substrate size.

Method for uniform growth of bi-layer transition metal dichalcogenide continuous films

A cryogenic vessel includes a shell, an inner vessel and a thermal insulation layer arranged on a periphery of the inner vessel, a gap is provided between the shell and the inner vessel to form a sandwich space in a vacuum environment. The pressurizing device includes a fixing member, a protruding member, a heat conducting member, an operating member and a connecting member.

Pressurizing device of cryogenic vessel and cryogenic vessel

Provided is a semiconductor power device. The device includes: at least one p-type body region located on the top of an n-type drift region, a first n-type source region and a second n-type source region located within the p-type body region, a first gate structure configured to control a first current channel between the first n-type source region and the n-type drift region to be turned on or off; and a second gate structure configured to control a second current channel between the second n-type source region and the n-type drift region to be turned on or off. The second gate structure is recessed in the n-type drift region.

Semiconductor power device

Provided is a semiconductor super junction power device which includes a super junction MOSFET cell array composed of multiple super junction MOSFET cells. A gate structure of the super junction MOSFET cell includes a gate dielectric layer, a gate and an n-type floating gate. The gate and the n-type floating gate are located above the gate dielectric layer; the gate is located on a side close to the n-type source region, and the n-type floating gate is located on a side close to the n-type drift region; the gate acts on the n-type floating gate through capacitive coupling. The n-type floating gate of at least one MOSFET cell is isolated from the p-type body region through the gate dielectric layer, and the n-type floating gate of at least one MOSFET cell contacts the p-type body region through an opening in the gate dielectric layer to form a p-n junction diode.

Semiconductor super-junction power device

A manufacturing method of a semiconductor super-junction device includes the following steps: An n-type substrate is etched in a self-aligning manner using a first insulating layer and a second insulating layer as a mask to form a second groove in the n-type substrate. A gate structure is formed in the second groove.

Manufacturing method of semiconductor super-junction device

Provided is a semiconductor super junction power device. The semiconductor super junction power device includes an MOSFET cell array composed of multiple super junction MOSFET cells. Each of multiple MOSFET cells includes a p-type body region located at the top of an n-type drift region, a p-type columnar doping region located below the p-type body region, an n-type source region located in the p-type body region, a gate dielectric layer located above the p-type body region, a gate electrode located above the p-type body region, an n-type floating gate located above the p-type body region and an opening located in the gate dielectric layer, where in a lateral direction, the gate electrode is located on one side close to the n-type source region; an opening located in the gate dielectric layer, where the n-type floating gate contacts the p-type body region through the opening to form a p-n junction diode.

The present application relates to the field of pharmaceutical technology, specifically to the crystal habit and crystalline powder preparation of quinoline derivatives, and more specifically, to the crystal habit and crystalline powder preparation of anlotinib dihydrochloride. The compound of formula II disclosed herein is a crystalline powder with a flaky crystal habit having a specific surface area &#x2265;10 m/g and a particle-size distribution of X&#x2264;50 &#x3bc;m and/or X&#x2264;500 &#x3bc;m, such that a large specific surface area is provided without reducing the particle size of the drug by a physical method under the condition of a broad particle-size distribution, and the drug can rapidly dissolving. In addition to excellent dissolution property, the crystalline powder is also beneficial to industrial manufacturing, featuring simplified process and cost-efficiency.

Crystal habit of quinoline derivative and preparation method for crystalline powder thereof

Provided is an insulated gate bipolar transistor power device. The IGBT power device includes a gate dielectric layer located above the two p-type body regions and the n-type drift region between the two p-type body regions, an n-type floating gate located above the gate dielectric layer; a gate located above the gate dielectric layer and the n-type floating gate; an insulating dielectric layer between the gate and the n-type floating gate; a first opening located in the gate dielectric layer, where the n-type floating gate is in contact with one of the two p-type body regions through the first opening to form a p-n junction diode; and a second opening located in the gate dielectric layer, where the n-type floating gate is in contact with the other of the two p-type body regions through the second opening to form the p-n junction diode.

IGBT power device

Provided is an IGBT device. The IGBT device includes an MOSFET cell array, where each MOSFET cell includes a p-type body region located at the top of an n-type drift region, an n-type emitter region located in the p-type body region, and a gate dielectric layer, a gate electrode and an n-type floating gate which are located above the p-type body region. The gate electrode is located above the gate dielectric layer, the n-type floating gate is located above the gate dielectric layer, and the gate electrode acts on the n-type floating gate through capacitive coupling. The n-type floating gate of at least one MOSFET cell is isolated from the p-type body region through the gate dielectric layer, and the n-type floating gate of at least one MOSFET cell contacts the p-type body region through an opening in the gate dielectric layer to form a p-n junction diode.

IGBT device

The present invention relates to an FGFRinhibitor having a structure represented by formula (I), preparation method therefor, and applications thereof. A series of compounds represented by formula (I) in the present invention have very-strong inhibition effect on the activity of FGFRkinase, have very-high selectivity, can be widely used in the preparation of drugs for treating cancers, specially a liver cancer, a stomach cancer, a prostate cancer, a skin cancer, an ovarian cancer, a lung cancer, a breast cancer or a colon cancer, and can be developed into a new-generation FGFRinhibitor drug. 

FGFR4 inhibitor, preparation method therefor, and applications thereof

Disclosed is a method for manufacturing a semiconductor super-junction device. The method includes: a gate is firstly formed in a gate region of a first trench, then an n-type epitaxial layer is etched with a hard mask layer and an insulating side wall covering a side wall of the gate as masks, and a second trench is formed in the n-type epitaxial layer, and then a p-type column is formed in the first trench and the second trench.

Method for manufacturing a semiconductor super-junction device

The present invention provides a gastrointestinal liquid biopsy sampling device. The sampling device includes an enclosure and expandable materials. The enclosure includes through holes cut in the wall of the enclosure, and targeted dissolution membranes covering the through holes that can be dissolved at targeted regions. The expandable materials are arranged at the positions corresponding to the through holes. The expandable materials expand after absorbing liquid and close the through holes.

Gastrointestinal liquid biopsy sampling device

Provided are an FGFR4 inhibitor with the structure of formula (I) and a preparation method and use thereof. The series of compounds of formula (I) have a very strong inhibitory effect on the FGFR4 kinase activity, and have a very high selectivity; and the same can be widely used to prepare drugs for treating cancers, in particular, liver cancer, stomach cancer, prostate cancer, skin cancer, ovarian cancer, lung cancer, breast cancer or colon cancer, and it is expected that the same can be developed into a new generation of FGFR4 inhibitor drugs. 

FGFR4 inhibitor and preparation method and use thereof

Growing community of inventors

Jiangsu, China

Lei Liu