Motorola Corporation

Freescale Semiconductor,inc.

Lei L Mercado

Vijay Sarihan

Young Sir Chung

James Jen-Ho Wang

Edward R Prack

Lianjun Liu

Shun-Meen Kuo

Jenn-Hwa Huang

Tien-Yu Tom Lee

Jay Jui Hsiang Liu

An electronic component includes an organic interposer (), a semiconductor chip () mounted over the organic interposer, copper pads () under the organic interposer, a solder attachment () between certain ones of the copper pads, and solder interconnects () between certain other ones of the copper pads and located around an outer perimeter () of the solder attachment. The solder attachment is placed at locations within the electronic component that experience the greatest stress, which may include, for example, locations adjacent to at least a portion of a perimeter () of the semiconductor chip. In one embodiment, a surface area of the solder attachment is larger than a surface area of each one of the solder interconnects. In the same or another embodiment, the electronic component includes multiple solder attachments.

Electronic component and method of manufacturing same

In accordance with one embodiment, a stress buffer () is formed between a power metal structure () and passivation layer (). The stress buffer () reduces the effects of stress imparted upon the passivation layer () by the power metal structure (). In accordance with an alternative embodiment, a power metal structure (A) is partitioned into segments (), whereby electrical continuity is maintained between the segments () by remaining portions of a seed layer () and adhesion/barrier layer (). The individual segments () impart a lower peak stress than a comparably sized continuous power metal structure ().

Semiconductor power device with shear stress compensation

A micro-electro-mechanical device ( ) including a shorting bar ( ) having a first portion ( ) electrically coupled to a first input/output signal line ( ) and a second portion ( ) electrically uncoupled to a second input/output signal line ( ). Shorting bar ( ) is coupled to a moveable end ( ) of a cantilever structure ( ). Thus, preferably only the second portion ( ) of shorting bar ( ) needs to be actuated to be electrically coupled to the second input/output signal line ( ).

Micro-electro-mechanical device and method of making

In accordance with one embodiment, a stress buffer ( ) is formed between a power metal structure ( ) and passivation layer ( ). The stress buffer ( ) reduces the effects of stress imparted upon the passivation layer ( ) by the power metal structure ( ). In accordance with an alternative embodiment, a power metal structure ( A) is partitioned into segments ( ), whereby electrical continuity is maintained between the segments ( ) by remaining portions of a seed layer ( ) and adhesion/barrier layer ( ). The individual segments ( ) impart a lower peak stress than a comparably sized continuous power metal structure ( ).

Semiconductor power device and method of formation

An electrical,and a method of making the package is disclosed. Specifically the package,contains a lid,with at least one opening,through the lid,into a cavity,surrounding the die,between the lid,and the substrate,of the package,. Underfill material,is injected through the opening,to at least partially fill the cavity,to prevent both vertical and horizontal die cracking and to provide a more reliable package.

Growing community of inventors

Gilbert, AZ, United States of America

Lei L Mercado