Globalfoundries Inc.

Lee Yongmeng

Lun Zhao

Tong Weihua

Kim Seung

Kim Sun

Krishnan Bharat

Generally, the present disclosure is directed to methods for forming reverse shallow trench isolation structures with super-steep retrograde wells for use with field effect transistor elements. One illustrative method disclosed herein includes performing a thermal oxidation process to form a layer of thermal oxide material on a semiconductor layer of a semiconductor substrate, and forming a plurality of openings in the layer of thermal oxide material to form a plurality of isolation regions from the layer of thermal oxide material, wherein each of the plurality of openings exposes a respective surface region of the semiconductor layer.

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Mechanicsville, NY, United States of America

Lee Yongmeng