Eastman-kodak Company

Global Oled Technology LLC

Rohm and Haas Denmark Finance A/s

Eastman Kodak

Eastmak Kodak Company

Lee William Tutt

Mitchell Stewart Burberry

Shelby Forrester Nelson

Myron W Culver

Ronald S Cok

Charles D DeBoer

Michael L Boroson

Kelvin Nguyen

David D Kessler

Debasis Majumdar

Ching W Tang

Glen C Irvin, Jr

Linda A Kaszczuk

Todd Mathew Spath

Kam Chuen Ng

Glenn T Pearce

Gary S Freedman

Sharon W Weber

Christine M Vargas

Dennis R Perchak

Steven Evans

David Howard Levy

Timothy John Tredwell

John A Agostinelli

Carolyn Rae Ellinger

Loretta E Allen

David B Kay

Donald R Preuss

Lawrence A Rowley

Scott E Tunney

Giana M Phelan

Donna P Suchy

Charles Chester Anderson

Christine Joanne Landry-Coltrain

Xiang-Dong Mi

Douglas Robert Robello

Kurt Michael Sanger

Dustin Lee Winters

Richard P Henzel

Robert W Spurr

Mark D Bedzyk

Joseph F Revelli, Jr

Joel D Shore

Linda Mae Franklin

William K Goebel

Vito A DePalma

Therese M Feller

Leonard S Gates

Laura A Weller-Brophy

Charles David Deboer

Scott E Phillips

Jason E Anderson

Xin Wen

Derek D Chapman

Teh-Ming Kung

Jose M Mir

David Louis Jeanmaire

Werner N Fassler

Ronald Myron Wexler

Samir Y Farid

Babak B Tehranchi

William Yurich Fowlkes

Thap DoMinh

Tomohiro Ishikawa

Denis Y Kondakov

Seung H Baek

Michael R Detty

Joseph K Madathil

Stephen M Neumann

Peter Jerome Cowdery-Corvan

Robert J Kress

David F Jennings

Ian R Gould

Yongtaek Hong

Andrea S Rivers

Robert G Spahn

Daniel D Haas

Bradley A Phillips

Richard W Topel, Jr

Robert H Cuffney

Robert B Bilhorn

James P Heetderks

Mark S Kaplan

Gerald Thomas Frizelle

Gary M Underwood

James B Geist

Charels C Anderson

Ronald Steven Cok

Michael Louis Boroson

Donald Robert Preuss

Joel David Shore

Myron William Culver

Gary Scot Freedman

A modular thin film deposition system, includes a machine base, a deposition head for depositing a thin film of material onto a process surface of a substrate, a motion actuator including a fixed portion and a moveable portion, and one or more interchangeable substrate positioner modules adapted to mount on the moveable portion of the motion actuator. The interchangeable substrate positioner modules include kinematic mounting features that engage with corresponding kinematic mounting features on the moveable portion of the motion actuator. The motion actuator moves the interchangeable substrate positioner in a motion direction, thereby moving the substrate in an in-track direction in a plane parallel to the output face of the deposition head during deposition of the thin film of material onto the process surface of the substrate.

Modular thin film deposition system

A deposition unit for a thin film deposition system includes one or more of deposition heads and a gas manifold. Each deposition head includes an output face having a plurality of gas openings, a mounting face including a plurality of deposition head gas ports, and connecting gas passages. The gas manifold includes an attachment face having one or more interface regions, each interface region including a plurality of manifold gas ports in positions corresponding to the deposition head gas ports. Each deposition head is fastened to the gas manifold in an interface region with sealing elements positioned between the manifold gas ports and the deposition head gas ports. The mounting face of each deposition head and the attachment face of the gas manifold include alignment features for aligning each deposition head with the interface region of the gas manifold.

Deposition system with modular deposition heads

A material deposition system for depositing a material on a surface of a substrate includes a deposition head having an output face configured to simultaneously supply a plurality of gaseous materials in a sequence of gas zones. The gas zones include a deposition zone located between first and second inert zones. The deposition zone includes a first reactant zone adjacent to the first inert zone, a last reactant zone adjacent to the second inert zone, and one or more purge gas zones. A motion actuator moves a substrate over the output face with a repeating motion profile that prevents a region of active deposition on the substrate from being exposed to the external environment prior to having achieved a final material deposition amount. The repeating motion profile include a forward motion portion and a backward motion portion which is less than the forward distance by an ooch distance.

Deposition system with repeating motion profile

A deposition unit for a thin film deposition system includes a plurality of deposition heads. Each deposition head includes an output face having a plurality of gas slots extending in a cross-track direction. Two of the deposition heads are positioned adjacent to each other in the cross-track direction such that the adjacent deposition heads have abutting ends. The abutting ends of the adjacent deposition heads include interlocking structures having an alternating sequence of protrusions and recesses such that the protrusions on the abutting end of one adjacent deposition head fit into the recesses on the abutting end of the other adjacent deposition head. The gas slots extend into the protrusions on the abutting ends such that in an overlap region, the gas slots of one adjacent deposition head overlap with the gas slots of the other adjacent deposition head.

Deposition system with interlocking deposition heads

A transistor includes a substrate, an electrically conductive material layer, and an electrically insulating material layer. At least a portion of one or more of the substrate, the electrically conductive material layer, and the electrically insulating material layer define a reentrant profile.

Transistor including reentrant profile

A method of making an electrical conductor includes depositing an ultra-thin layer including aluminum-doped zinc oxide layer on a surface and using atomic layer deposition to deposit a nano-layer including alumina in contact and conformal with a surface of the ultra-thin layer including aluminum-doped zinc oxide.

Method of passivating ultra-thin AZO with nano-layer alumina

An electrical conductor includes an ultra-thin layer of aluminum-doped zinc-oxide and a nano-layer of alumina in contact and conformal with a surface of the ultra-thin aluminum-doped zinc-oxide layer.

Ultra-thin AZO with nano-layer alumina passivation

A vertical transistor includes a substrate and an electrically conductive gate structure having a top surface and including a reentrant profile. A conformal electrically insulating layer that maintains the reentrant profile is in contact with the electrically conductive gate structure and at least a portion of the substrate. A conformal semiconductor layer that maintains the reentrant profile is in contact with the conformal electrically insulating layer. An electrode that extends into the reentrant profile is in contact with a first portion of the semiconductor layer. Another electrode is vertically spaced apart from the electrode, overlaps a portion of the electrode that extends into the reentrant profile, is in contact with a second portion of the semiconductor material layer over the top surface of the electrically conductive gate structure, and is within the reentrant profile.

VTFT including overlapping electrodes

A method of forming a gate layer of a thin film transistor includes providing a substrate including a gate structure having a reentrant profile. A conformal conductive inorganic thin film is deposited over the gate structure and in the reentrant profile. A photoresist is deposited on the conformal conductive inorganic thin film over the gate structure and filling the reentrant profile. The photoresist is exposed from a side of the photoresist opposite the substrate allowing the photoresist in the reentrant profile to remain unexposed. The conformal conductive inorganic thin film is etched in areas not protected by the photoresist to form a patterned conductive gate layer located in the reentrant profile of the gate structure.

Forming a VTFT with aligned gate

Producing a transistor includes providing a substrate including in order a first electrically conductive material layer positioned on the substrate and a first electrically insulating material layer positioned on the first electrically conductive material layer. A gate including a reentrant profile is formed from an electrically conductive material layer stack provided on the first electrically insulating material layer in which a first portion of the gate is sized and positioned to extend beyond a second portion of the gate. The gate including the reentrant profile and at least a portion of the first electrically insulating material layer are conformally coated with a second electrically insulating material layer. The second electrically insulating material layer is conformally coated the with a semiconductor material layer. A source and drain electrodes are formed simultaneously by directionally depositing a second electrically conductive material layer on portions of the semiconductor material layer.

Four terminal transistor fabrication

A system for engraving a flexographic relief member includes a laser scanning apparatus providing a focused radiation beam. The flexographic relief member includes a laser engraveable flexographic member; a thin engraveable control layer on top of the flexographic member; and wherein the engraveable control layer has an engraving sensitivity lower than the flexographic member.

System for direct engraving of flexographic printing members

A method of producing a transistor includes providing a substrate including an electrically conductive material layer stack positioned on the substrate. A first electrically insulating material layer is deposited so that the first electrically insulating material layer contacts a first portion of the electrically conductive material layer stack. A second electrically insulating material layer is conformally deposited so that the second electrically insulating material contacts the first electrically insulating layer, and contacts a second portion of the electrically conductive material layer stack, and contacts at least a portion of the substrate.

Producing vertical transistor having reduced parasitic capacitance

A transistor includes a substrate. A first electrically conductive material layer is positioned on the substrate. A second electrically conductive material layer is in contact with and positioned on the first electrically conductive material layer. The second electrically conductive material layer includes a reentrant profile. The second electrically conductive material layer also overhangs the first electrically conductive material layer.

Transistor including multiple reentrant profiles

A transistor includes a substrate. A first electrically conductive material layer, having a thickness, is positioned on the substrate. A second electrically conductive material layer is in contact with and positioned on the first electrically conductive material layer. The second electrically conductive material layer overhangs the first electrically conductive material layer. An electrically insulating material layer, having a thickness, is conformally positioned over the second electrically conductive material layer, the first electrically conductive material layer, and at least a portion of the substrate. The thickness of the first electrically conductive material layer is greater than the thickness of the electrically insulating material layer.

Transistor including reduced channel length

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Webster, NY, United States of America

Lee William Tutt