Memc Electronic Materials, Inc.

Memc Singapore Pte. Ltd.

Memc Singapore Pte. Ltd. (uen200614794d)

Corner Star Limited

Lee William Ferry

Richard G Schrenker

Benjamin Michael Meyer

William L Luter

Steven Lawrence Kimbel

Mohsen Banan

Zheng Lu

Carl F Cherko

Rituraj Nandan

Ying Tao

Jihong (John) Chen

Puneet Gupta

Hariprasad Sreedharamurthy

Satish Bhusarapu

Kyong-Min Kim

Mauro Diodà

Paolo Tosi

Vivek Tomar

Kirk D McCallum

Umberto Martini

Yasuhiro Ishii

Robert J Braun

Srdjan Ilic

Marco Gobbo

Clamping assemblies for sealing an annular chamber and reaction chamber of a reactor system are disclosed. The clamping assemblies may include actuators that are symmetrically arranged in two or more independently controllable groups of actuators.

Clamping assembly for a reactor system

Methods are disclosed for inhibiting heat transfer through lateral sidewalls of a support member positioned beneath a crucible in a directional solidification furnace. The methods include the use of insulation positioned adjacent the lateral sidewalls of the support member. The insulation inhibits heat transfer through the lateral sidewalls of the support member to ensure the one-dimensional transfer of heat from the melt through the support member.

Methods of adjusting insulation in a directional solidification furnace

A directional solidification furnace includes one or more movable cooling plates disposed beneath a crucible. In a first position, the cooling plates are free from contact with a crucible support positioned adjacent the crucible. In a second position, the cooling plates are in contact with the crucible support. A control system is used to control the amount of force exerted by the cooling plates against the crucible.

Directional solidification furnace having movable heat exchangers

A directional solidification furnace includes a crucible for holding molten silicon and a lid covering the crucible and forming an enclosure over the molten silicon. The crucible also includes an inlet in the lid for introducing inert gas above the molten silicon to inhibit contamination of the molten silicon.

Directional solidification furnace for reducing melt contamination and reducing wafer contamination

A heat exchanger system for use in a directional solidification furnace is disclosed. The heat exchanger includes a plate having a flow path formed in the plate for directing a flow of coolant. The flow path has an inlet positioned adjacent an outlet. A wall separates the inlet and the outlet of the flow path. The heat exchanger includes a cover having an opening in fluid communication with the inlet and the outlet of the flow path. An inner conduit is connected to the inlet of the flow path and an outer conduit is connected to the outlet of the flow path.

Directional solidification furnace heat exchanger

Method of adjusting insulation in a directional solidification furnace

A heat shield assembly is disclosed for use in a crystal puller for growing a monocrystalline ingot from molten semiconductor source material. The heat shield assembly has a central opening sized and shaped for surrounding the ingot as the ingot is pulled from the molten source material. In one aspect, the heat shield assembly includes a multi-sectioned outer shield and a multi-sectioned inner shield. The sections of at least one of the inner and outer shields may be releasably connected to one another so that, in the event a section is damaged, the sections may be separated to allow replacement with an undamaged section. In another aspect the heat shield assembly includes an upper section and a lower section extending generally downward from the upper section toward the molten material. The lower section has a height equal to at least about 33% of a height of the heat shield assembly.

Heat shield assembly for a crystal puller

A crystal puller and method for growing monocrystalline silicon ingots includes first and second electrical resistance heaters in the crystal puller in longitudinal, closely spaced relationship with each other to radiate heat toward the ingot as the ingot is pulled upward within the housing. In one embodiment, the first heater is powered when the ingot is pulled upward to a first axial position above the surface of the molten silicon and the second heater is powered when the ingot is pulled upward to a second axial position above the first axial position. In another embodiment the first and second heaters are powered until the ingot is separated from the molten silicon and then the heating power output of the first and second heaters is reduced to substantially increase the cooling rate at which the ingot is cooled. An adapter mounting the heaters may also be provided for adapting existing crystal pullers to incorporate the heaters.

Crystal puller and method for growing monocrystalline silicon ingots

A heat shield assembly for use in a crystal puller has an outer reflector interposed between the ingot and the crucible as the ingot is pulled from the molten source material. A cooling shield is interposed between the ingot and the outer reflector whereby the cooling shield is exposed to heat radiated from the ingot for increasing the rate at which the ingot is cooled, thereby increasing the axial temperature gradient of the ingot. In a further embodiment, an inner shield panel is disposed generally intermediate the cooling shield and the ingot in radially spaced relationship with the cooling shield and is constructed of a material substantially transparent to radiant heat from the ingot.

Heat shield assembly for crystal puller

A crystal puller for growing monocrystalline silicon ingots includes first and second electrical resistance heaters in the crystal puller in longitudinal, closely spaced relationship with each other to radiate heat toward the ingot as the ingot is pulled upward within the housing. An adapter mounting the heaters may also be provided for adapting existing crystal pullers to incorporate the heaters.

Crystal puller for growing monocrystalline silicon ingots

A heat shield assembly is adapted for location within a crystal puller, with respect to a crucible, above molten source material held by the crucible in the puller. The heat shield assembly has a central opening sized and shaped for surrounding the ingot as the ingot is pulled from the molten material and is generally interposed between the ingot and the crucible as the ingot is pulled from the source material. The heat shield assembly comprises an outer reflector having an inner surface and an outer surface in generally opposed, spaced relationship with a side wall of the crucible, and an inner reflector located inward of the outer reflector. The inner reflector is constructed of a material having a low emissivity and has an outer surface in generally opposed relationship with the inner surface of the outer reflector. At least one of the outer surface of the inner reflector and the inner surface of the outer reflector has a spacer projecting outward therefrom and adapted for contact relationship between the inner reflector and the outer reflector. The spacer spaces the outer surface of the inner reflector from the inner surface of the outer reflector to inhibit heat conduction from the outer reflector to the inner reflector.

Heat shield assembly for crystal pulling apparatus

A heat shield for a crystal puller including an inner and an outer reflector. The inner and outer reflectors are spaced from each other an have reduced surface area in which they contact each other. Improved heat shielding of a growing crystal ingot reduces defects and permits a greater throughput of ingots produced by the crystal puller.

A heat shield for use in a crystal puller around a monocrystalline ingot grown out of a crucible in the crystal puller filled with molten semiconductor source material. The heat shield includes a reflector having a central opening sized and shaped for surrounding the ingot as the ingot is grown to reduce heat transfer from the crucible. The reflector is adapted to be supported in the crystal puller between the molten material and a camera aimed toward at three separate points on a meniscus formed between the ingot and an upper surface of the molten material. The reflector has at least three passages extending through the reflector. Each of the passages is located along an imaginary line extending between the camera and one of the points on the meniscus. This permits the camera to view the points so the positions of the points can be determined by the camera for calculating the diameter of the ingot while minimizing heat loss through the passages.

Heat shield for crystal puller

A heat shield assembly is used in a Czochralski crystal puller for selectively shielding a monocrystalline ingot of semiconductor material to control the type and number density of agglomerated defects in the crystal structure of the ingot. The heat shield assembly has an upper heat shield connected to a lower heat shield. The upper and lower heat shields are connected to each other and slidingly connected to an intermediate heat shield. The lower heat shield is able to telescope up into the intermediate heat shield to minimize the profile of the heat shield assembly located within a crystal growth chamber of the crystal puller. However when needed to control formation of the monocrystalline ingot, the lower heat shield may be extended from the intermediate heat shield and project downwardly into the crystal puller crucible in close proximity to an upper surface of molten semiconductor source material in the crucible. A method employing the heat shield assembly is also disclosed.

Growing community of inventors

St. Charles, MO, United States of America

Lee William Ferry