Diodes Inc.

Lee Spencer Riley

Ze Rui Chen

Pin-Hao Huang

Tao Long

Peter Hugh Blair

Bau-Shun Huang

A semiconductor structure includes: a substrate, having a cell region and a terminal region, and having a first surface, a second located in the terminal region, and a third surface located in the cell region, the second surface and the third surface being located at different levels; a first trench structure, located in the cell region, traversing the third surface to extend towards the first surface, including a first semiconductor material layer and a first oxide layer partially protruding from the third surface, and extending in a first direction parallel to the third surface; and a second trench structure, located in the cell region, including a second semiconductor material layer and a second oxide layer partially protruding from the third surface, and extending parallel to the first direction, wherein the third surface is provided with a doped region between the first trench structure and the second trench structure.

Trench MOS rectifier with termination structure

A trenched MOS gate controlled rectifier has an asymmetric trench structure between the active area of active trenches and the termination area of termination trenches. The asymmetric trench structure has a gate electrode on one side of the trench to turn on and off the channel of the MOS structure effectively and a field plate structure on the other side with field dielectric sufficiently thick in order to sustain the high electric field during the reverse bias condition.

Trenched MOS gate controlled rectifier

A method for forming a rectifier device is provided. The method forms a first layer on a substrate, a second layer is formed on the first layer and a photoresist layer is deposited on the second layer in which a plurality of trench patterns are formed. A plurality of trenches are formed in the first layer and the second layer by etching based on the trench patterns in the photoresist. The method then laterally etches the second layer to expose a corner portion of the first layer at mesas formed in between the two trenches. A portion of the second layer is preserved at an edge of the rectifier device.

Growing community of inventors

West Yorkshire, United Kingdom

Lee Spencer Riley