Rodel Holdings, Inc.

Rodel Inc.

Rohm and Haas Electronic Materials Cmp Holdings, Inc.

Nitta Haas Inc.

Lee Melbourne Cook

David B James

John V H Roberts

William D Budinger

Jiun-Fang Wang

Charles William Jenkins

Anantha R Sethuraman

Nina G Chechik

Michael R Oliver

John V Roberts

Peter A Burke

Heinz F Reinhardt

Richard M Levering, Jr

Arun Vishwanathan

David Shidner

Raj Raghav Pillai

John H V Roberts

Gregory Brancaleoni

Sharath D Hosali

Joseph K So

Naresh Kumar Penta

James Shen

Scott B Loncki

Huey-Ming Wang

Arthur Richard Baker

Lizhong Sun

Guangwei Wu

Yuhua Tong

Michael E Mills

Julia Kozhukh

Jeffrey James Hendron

Hiroyuki Nakano

Hongyu Wang

Masashi Teramoto

Koichi Yoshida

Takayuki Matsushita

Shinichi Haba

Ronald David Bakule

Yasuyuki Itai

Naoko Kawai

Yoshiharu Ota

Ching-Hsun Chao

Patricia Connell

Sakiko Nakashima

Tomoyuki Toda

David Cossaboon

Keith G Pierce

The invention provides a polishing pad suitable for polishing or planarizing at least one of semiconductor, optical and magnetic substrates. The polishing pad includes a polishing layer having a polymeric matrix, a thickness and a polishing track representing a working region of the polishing layer for polishing or planarizing. Radial drainage grooves extend through the polishing track facilitate polishing debris removal through the polishing track and underneath the at least one of semiconductor, optical and magnetic substrates and then beyond the polishing track toward the perimeter of the polishing pad during rotation of the polishing pad.

Debris-removal groove for CMP polishing pad

The present invention provides methods for chemical mechanical polishing (CMP polishing) spin coated organic polymer films on a semiconductor wafer or substrate as part of lithography or as part of electronic packaging. The methods comprising spin coating an organic polymer liquid on a semiconductor wafer or substrate; at least partially curing the spin coating to form an organic polymer film; and, CMP polishing the organic polymer film with a polishing pad and an aqueous CMP polishing composition having a pH ranging from 1.5 to 4.5 and comprising elongated, bent or nodular silica particles containing one or more cationic nitrogen or phosphorus atoms, from 0.005 to 0.5 wt. %, based on total CMP polishing composition solids, of a sulfate group containing Cto Calkyl or alkenyl group surfactant, and a pH adjusting agent.

Cationic particle containing slurries and methods of using them for CMP of spin-on carbon films

A method for chemical mechanical polishing of a substrate comprising ruthenium and copper is provided wherein the substrate is contacted with a polishing slurry containing an abrasive, hypochlorite, a copolymer of acrylic acid and methacrylic acid, benzotriazole, poly(methyl vinyl ether) and a non-ionic surfactant at a pH of 9 to 11.

Method for chemical mechanical polishing substrates containing ruthenium and copper

A chemical mechanical polishing composition for polishing silicon wafers is provided, containing: water, optionally, an abrasive; a cation according to formula (I); piperazine or a piperazine derivative according to formula (II); and, a quaternary ammonium compound; wherein the chemical mechanical polishing composition exhibits a pH of 9 to 12. Also provided are methods of making and using the chemical mechanical polishing composition.

Chemical mechanical polishing composition for polishing silicon wafers and related methods

A stable, concentratable silicon wafer polishing composition for polishing silicon wafers is provided, containing: water; an abrasive; a cation according to formula (I); piperazine or a piperazine derivative according to formula (II); and, optionally, a pH adjusting agent; wherein the polishing composition exhibits a silicon removal rate of at least 300 nm/min. Also provided are methods of making and using the stabilized, concentratable chemical mechanical polishing composition.

Stable, concentratable silicon wafer polishing composition and related methods

A chemical mechanical polishing composition for polishing silicon wafers is provided, containing: water; a cation according to formula (I); piperazine or a piperazine derivative according to formula (II); and, optionally, a pH adjusting agent; wherein the polishing composition exhibits a silicon removal rate of at least 300 nm/min. Also provided are methods of making and using the chemical mechanical polishing composition.

Silicon wafer polishing composition and related methods

This invention describes improved polishing pads useful in the manufacture of semiconductor devices or the like. The pads of the present invention have an advantageous hydrophilic polishing material and have an innovative surface topography and texture which generally improves predictability and polishing performance.

Polishing pads and methods relating thereto

An improved pad and process for polishing metal damascene structures on a semiconductor wafer. The process includes the steps of pressing the wafer against the surface of a polymer sheet in combination with an aqueous-based liquid that optionally contains sub-micron particles and providing a means for relative motion of wafer and polishing pad under pressure so that the moving pressurized contact results in planar removal of the surface of said wafer, wherein the polishing pad has a low elastic recovery when said load is removed, so that the mechanical response of the sheet is largely anelastic. The improved pad is characterized by a high energy dissipation coupled with a high pad stiffness. The pad exhibits a stable morphology that can be reproduced easily and consistently. The pad surface resists glazing, thereby requiring less frequent and less aggressive conditioning. The benefits of such a polishing pad are low dishing of metal features, low oxide erosion, reduced pad conditioning, longer pad life, high metal removal rates, good planarization, and lower defectivity (scratches and Light Point Defects).

Polishing pads for chemical mechanical planarization

The present invention provides a polishing pad for electrochemical mechanical polishing of conductive substrate. The pad comprises a plurality of grooves formed in a polishing surface of the polishing pad, the grooves being adapted to facilitate the flow of polishing fluid over the polishing pad. The conductive layers are respectively formed in the grooves and are in electrical communication with each other.

Polishing pad for electrochemical mechanical polishing

An improved pad and process for polishing metal damascene structures on a semiconductor wafer. The process includes the steps of pressing the wafer against the surface of a polymer sheet in combination with an aqueous-based liquid that optionally contains sub-micron particles and providing a means for relative motion of wafer and polishing pad under pressure so that the moving pressurized contact results in planar removal of the surface of said wafer, wherein the polishing pad has a low elastic recovery when said load is removed, so that the mechanical response of the sheet is largely anelastic. The improved pad is characterized by a high energy dissipation coupled with a high pad stiffness and hydrolytic stability.

Hydrolytically stable grooved polishing pads for chemical mechanical planarization

Polishing pads are provided having a polishing surface formed from a material. The polishing surface has a topography produced by a thermoforming process. The topography consists of large and small features that facilitate the flow of polishing fluid and facilitate smoothing and planarizing.

An improved pad and process for polishing metal damascene structures on a semiconductor wafer. The process includes the steps of pressing the wafer against the surface of a polymer sheet in combination with an aqueous-based liquid that optionally contains sub-micron particles and providing a means for relative motion of wafer and polishing, pad under pressure so that the moving pressurized contact results in planar removal of the surface of said wafer, wherein the polishing pad has a low elastic recovery when said load is removed, so that the mechanical response of the sheet is largely anelastic. The improved pad is characterized by a high energy dissipation coupled with a high pad stiffness. The pad also exhibits a stable morphology that can be reproduced easily and consistently. The pad surface has macro-texture that includes perforations as well as surface groove designs The surface groove designs have specific relationships between groove depth and overall pad thickness and groove.area and land area. The pad of this invention resists glazing, thereby requiring less frequent and less aggressive conditioning. The benefits of such a polishing pad are low dishing of metal features, low oxide erosion, reduced pad conditioning, longer pad life, better slurry distribution and waste removal from the pad surface, high metal removal rates, good planarization, and lower defectivity (scratches and Light Point Defects).

Grooved polishing pads for chemical mechanical planarization

This invention describes improved polishing pads useful in the manufacture of semiconductor devices or the like. The pads of the present invention have an advantageous hydrofoil polishing material and have an innovative surface topography and texture which generally improves predictability and polishing performance.

A polishing pad with a polishing layer having a macro-texture and a micro-texture wherein the polishing layer is formed by solidifying a flowable material, the polishing layer further comprising hard domains and soft domains, each domain having an average size less than 100 microns.

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Steelville, PA, United States of America

Lee Melbourne Cook