Applied Materials, Inc.

Other

Advanced Micro-fabrication Equipment, Inc. Asia

Lee Luo

Jun Zhao

Shulin Wang

Talex Sajoto

Stefan A Wolff

Charles N Dornfest

Aihua Chen

Mei Yin Chang

Ashok K Sinha

Steven Aihua Chen

Xianzhi Tao

Michal Danek

Avi Tepman

Gerald Zheyao Yin

Ming Li

Alex Schreiber

Xiao Liang Jin

Ulrich Kroemer

Claes H Bjorkman

Henry Ho

Leonid Selyutin

Xiaoliang Jin

Li Fu

Brian Sy Yuan Shieh

Jia-Xiang Wang

Errol C Sanchez

Kegang Huang

Sheeba J Panayil

Christopher G Quentin

Janardhanan Anand Subramony

Jennifer Y Sun

Christopher Dennis Bencher

Errol Antonio C Sanchez

Tuqiang Q Ni

Diana Xiaobing Ma

Senh Thach

Yoshitaka Yokota

Yuji Maeda

Paul F Smith

Eller Y Juco

Alexander Tam

Sang H Ahn

R Suryanarayanan Iyer

Chang-Lin Hsieh

Jinyuan Chen

Kuan-Ting Lin

Frank P Chang

Hung-Chuan Chen

Steven Yencheng Chen

Richard Palicka

AiHua Chen

Harold H Mortensen

Po Tang

Binh Hoa Tran

Nobuo Tokai

Tzy-Tzan Fu

Randhir P Singh Thakur

Ramaseshan Suryanarayanan Iyer

Yijun Liu

Chang-Lian Yan

Errol A C Sanchez

Zoran Dragojlovic

A plasma chamber is constructed to have a chamber body defining therein a plurality of process stations. A plurality of rotating substrate holders are each situated in one of the process stations and a plurality of in-situ plasma generation regions are each provided above one of the substrate holders. A plurality of quasi-remote plasma generation regions are each provided above a corresponding in-situ plasma generation region and being in gaseous communication with the corresponding in-situ plasma generation region. An RF energy source is coupled to each of the quasi-remote plasma generation regions.

Multi-station plasma reactor with multiple plasma regions

In one embodiment, a method for forming a tungsten barrier material on a substrate is provided which includes depositing a tungsten layer on a substrate during a vapor deposition process and exposing the substrate sequentially to a tungsten precursor and a nitrogen precursor to form a tungsten nitride layer on the tungsten layer. Some examples provide that the tungsten layer may be deposited by sequentially exposing the substrate to the tungsten precursor and a reducing gas (e.g., diborane or silane) during an atomic layer deposition process. The tungsten layer may have a thickness of about 50 &#x212b; or less and tungsten nitride layer may have an electrical resistivity of about 380 &#x3bc;&#x3a9;-cm or less. Other examples provide that a tungsten bulk layer may be deposited on the tungsten nitride layer by a chemical vapor deposition process.

Tungsten nitride atomic layer deposition processes

A variety of techniques may be employed alone or in combination to reduce the incidence of defects arising in dielectric stack structures formed by chemical vapor deposition (CVD). Incidence of a first defect type attributable to reaction between an unreacted species of a prior CVD step and reactants of a subsequent CVD step, is reduced by exposing a freshly-deposited dielectric layer to a plasma before any additional layers are deposited. Incidence of a second defect type attributable to the presence of incompletely vaporized CVD liquid precursor material, is reduced by exposing the freshly-deposited dielectric layer to a plasma, and/or by continuing the flow of carrier gas through an injection valve for a period beyond the conclusion of the CVD step.

Methods and devices to reduce defects in dielectric stack structures

Method of forming a lightly phosphorous doped silicon film. A substrate is provided. A process gas comprising a phosphorous source gas and a disilane gas is used to form a lightly phosphorous doped silicon film on the substrate. The diluted phosphorous source gas has a phosphorous concentration of 1%. The phosphorous source gas and the disilane gas have a flow ratio less than 1:100. The lightly phosphorous doped silicon film has a phosphorous doping concentration less than 1&#xd7;10atoms/cm.

Method of forming a controlled and uniform lightly phosphorous doped silicon film

A method for depositing a tungsten nitride layer is provided. The method includes a cyclical process of alternately adsorbing a tungsten-containing compound and a nitrogen-containing compound on a substrate. The barrier layer has a reduced resistivity, lower concentration of fluorine, and can be deposited at any desired thickness, such as less than 100 angstroms, to minimize the amount of barrier layer material.

Cyclical deposition of tungsten nitride for metal oxide gate electrode

An integrated in situ etch process performed in a multichamber substrate processing system having first and second etching chambers. In one embodiment the first chamber includes an interior surface that has been roughened to at least 100 Rand the second chamber includes an interior surface that has a roughness of less than about 32 R. The process includes transferring a substrate having formed thereon in a downward direction a patterned photoresist mask, a dielectric layer, a barrier layer and a feature in the substrate to be contacted into the first chamber where the dielectric layer is etched in a process that encourages polymer formation over the roughened interior surface of the chamber. The substrate is then transferred from the first chamber to the second chamber under vacuum conditions and, in the second chamber, is exposed to a reactive plasma such as oxygen to strip away the photoresist mask deposited over the substrate. After the photoresist mask is stripped, the barrier layer is etched through to the feature to be contacted in the second chamber of the multichamber substrate processing system using a process that discourages polymer formation over the relatively smooth interior surface of the second chamber. All three etching steps are performed in a system level in situ process so that the substrate is not exposed to an ambient between steps. In some embodiments the interior surface of the first chamber has a roughness between 100 and 200 Rand in other embodiments the roughness of the first chamber's interior surface is between 110 and 160 R.

System level in-situ integrated dielectric etch process particularly useful for copper dual damascene

A silicon comprising film and its method of fabrication is described. The silicon comprising film is grown on a substrate. A hexachlorodisilane (HCD) source gas is one of the reactant species used to form the silicon comprising film. The silicon comprising film is formed under a pressure between 10 Torr and 350 Torr.

Methods for forming silicon comprising films using hexachlorodisilane in a single-wafer deposion chamber

An apparatus that includes a pumping plate having a skirt, where the skirt contains a number of holes and a wafer access slot, and where the number of holes are sized and positioned to provide uniform heating of a susceptor.

Emissivity-change-free pumping plate kit in a single wafer chamber

An integrated in situ etch process performed in a multichamber substrate processing system having first and second etching chambers. The process includes transferring a substrate having formed thereon in a downward direction a patterned photoresist mask, a dielectric layer, a stop layer and a feature in the substrate to be contacted into the first etching chamber to etch the dielectric layer. The substrate is then transferred from the first etching chamber to the second etching chamber under vacuum conditions and, in the second etching chamber, is exposed to an oxygen plasma or similar environment to strip away the photoresist mask deposited over the substrate. After the photoresist mask is stripped, the stop layer is etched through to the feature to be contacted in either the second or a third etching chamber of said multichamber substrate processing system. All three etching steps are performed in a system level in situ process so that the substrate is not exposed to an ambient between steps.

Method of controlling the crystal structure of polycrystalline silicon

An oxide and an oxynitride films and their methods of fabrication are described. The oxide or the oxynitride film is grown on a substrate that is placed in a deposition chamber. A silicon source gas (or a silicon source gas with a nitridation source gas) and an oxidation source gas are decomposed in the deposition chamber using a thermal energy source. A silicon oxide (or an oxynitride) film is formed above the substrate wherein total pressure for the deposition chamber is maintained in the range of 50 Torr to 350 Torr and wherein a flow ratio for the silicon source gas (or the silicon source gas with the nitridiation source gas) and the oxidation source gas is in the range of 1:50 to 1:10000 during a deposition process.

Methods for silicon oxide and oxynitride deposition using single wafer low pressure CVD

Provided herein is an emissivity-change-free pumping plate kit used in a single wafer chamber. This kit comprises a top open pumping plate, and optionally a skirt and/or a second stage choking plate. The skirt may be installed around the wafer heater, underneath the wafer heater, or along the chamber body inside the chamber. The choking plate is installed downstream of the top open pumping plate along the purge gas flow. Also provided is a method of preventing emissivity change and further providing optimal film thickness uniformity during wafer processing by utilizing such kit in the chamber.

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Fremont, CA, United States of America

Lee Luo