Industrial Technology Research Institute

National Science Council

Lee-Ching Kuo

Yean-Kuen Fang

Kuen-Hsien Lee

Ming-Hann Tzeng

Yaw-Jou Yang

Chih-Chiang Chen

Fang-Chuan Ho

Jinn-Shing King

Yih-Song Jan

Chorng-Jye Huang

Jong-Min Liu

William W Lee

Chien-Sheng Huang

Cheng-Ting Chen

Wen-Yueh Hsu

Yu-Tai Tsai

The present invention discloses a dust-proof and weather resistant photovoltaic module, including (a) a front substrate of light transmittable safety glass plate, wherein a photo-catalyst composition is applied to the safety glass plate; (b) a back substrate of weather resistant polyester polymer; and (c) a photosensitizer including electrical circuit copper foils and polymeric enclosing material (EVA) which is located between the front substrate and the back substrate. The method for fabricating a front substrate of a photovoltaic module includes applying a photo-catalyst composition onto a safety glass plate; evaporating the photo-catalyst composition to a gel; and seating the gel to Rutile titanium dioxide. The photo-catalyst composition includes a metal oxide, an acid regent and a surfactant.

Dust-proof and weather resistant photovoltaic module and fabricating method thereof

This invention discloses a novel method for fabricating solar cells. Using the existing screen-printing, masking or photolithography techniques, a P-type or N-type diffusion source is coated on the sites of an N-type or P-type silicon wafer desired for forming electrodes. Then, a low dose P-type or N-type diffusion source is in situ diffused into the N-type or P-type silicon wafer together with the P-type or N-type diffusion source coated on the N-type or P-type silicon wafer in the furnace. Thereafter, a P,/P,or N,/N,diffusion region is formed within the N-type or P-type silicon wafer. Finally, electrodes aligned to the P,or N,diffusion region are formed by means of screen-printing. Then, a solar cell with high photocurrent and low series resistance can be obtained.

Method for fabricating solar cells

An amorphous silicon color detector comprising a structure composed of a transparent conductive oxide film (TCO) layer/an a-Si:H layer/a metal layer, of which the a-Si:H layer is an amorphous silicone layer having a thickness greater than 1 .mu.m, and the metal layer is made of a metals selected from the metal group consisting of Cr, Au, Pd, Al, Pt, Mo, Ag or Ti. A depletion region of the color detector is re-arranged in position and in content thereof according to the absorbencies to different color lights in different bias voltages to achieve the purpose of detecting different color light. An amorphous silicone color image sensor comprises a plurality of the color detectors arranged in linear array incorporated with a scanning device, a processor and an A/D converter to process the signals obtained from scanning. The amorphous silicone color image sensor is especially used in a scanning machine or a fax machine. A manufacture process of the amorphous silicon color detector is also disclosed.

Amorphous silicon color detector and manufacture of same

A method of manufacturing a light converter with an LED and an amorphous-silicon pin heterojunction diode includes steps of a) preparing an LED structure on one side of a substrate as a light-emitting unit; b) forming a buffer layer on the other side of the substrate; and c) depositing a pin (positive type/intrinsic type/negative type) diode on the buffer layer as a light-absorbing unit this blue/red light converter, and the value of rise time obtained under 1 k.OMEGA. is 112.5 .mu.sec. The present invention desirably lower the cost, simplify the preparation process, and avoids degrading features of a light converting unit by over-heating during the process of preparing the pin diode.

Method of manufacturing light converter with amorphous-silicon pin

The present method provides a method for preparing the PI varnish which has the steps of: 1) preparing a mixed solution of 60-100% by weight aprotic solvent, and 0-40% by weight aromatic solvent; 2) adding into the mixed solution in a mole ratio of 1:9 two aromatic diamines; and 3) further adding in the mixed solution in a mole ratio of 1:5 two aromatic dianhydrides. Such PI has a suitable thermal expansion coefficient and characteristics different form those of the PI currently in use.

Method for synthesizing polyamic acid for manufacturing flexible

A method of manufacturing a light converter with an LED and an amorphous-silicon pin heterojunction diode includes steps of a) preparing an LED structure on one side of a substrate as a light-emitting unit; b) forming a buffer layer on the other side of the substrate; and c) depositing a pin (positive type/intrinsic type/negative type) diode on the buffer layer as a light-absorbing unit this blue/red light converter, and the value of rise time obtained under 1 kf.OMEGA. is 112.5 .mu.sec. The present invention desirably lower the cost, simplify the preparation process, and avoids degrading features of a light converting unit by over-heating during the process of preparing the pin diode.

A color filter comprising a transparent substrate and two or more multilayer films of amorphous silicon materials deposited on said substrate, each film being different, each layer of said two or more multi-layer films having a thickness less than the wavelength of the visible light and at least three layers of said two or more multi-layer films of amorphous silicon materials in an alternate arrangement wherein the amorphous silicon materials are selected from a-SiOx and a-SiNx is described. A method of preparing the color filter comprising depositing on the substrate by PECVD method two or more multilayer films is also described. The color filters prepared by PECVD method have a more compact texture and a better environmental resistant. The PECVD method for the preparation of the filters is more efficient than conventional methods.

Color filters and their preparation

An amorphous silicon color detector comprising a structure composed of a transparent conductive oxide film (TCO) layer/an a-Si:H layer/a metal layer, of which the a-Si:H layer is an amorphous silicone layer having a thickness greater than 1 .mu.m, and the metal layer is made of a metals selected from the metal group consisting of Cr, Au, Pd, Al, Pt, Mo, Ag or Ti. A depletion region of the color-detector is re-arranged in position and in content thereof according to the absorbencies to different color lights in different bias voltages to achieve the purpose of detecting different color light. An amorphous silicone color image sensor comprises a plurality of the color detectors arranged in linear array incorporated with a scanning device, a processor and an A/D converter to process the signals obtained from scanning. The amorphous silicone color image sensor is especially used in a scanning machine or a fax machine. A manufacture process of the amorphous silicon color detector is also disclosed.

Growing community of inventors

Hsinchu, Taiwan

Lee-Ching Kuo