Semiconductor Manufacturing International (shanghai) Corporation

Semiconductor Manufacturing International (beijing) Corporation

Lee Chang

Roger Lee

Guoqing Chen

A liquid crystal on silicon (LCOS) device includes a semiconductor substrate, a metal-oxide semiconductor (MOS) device layer overlying the semiconductor substrate, a planarized interlayer dielectric layer overlying the MOS device layer, a plurality of recessed regions formed within a portion of the interlayer dielectric layer, a metal layer filling each of the recessed regions to form a plurality of respective electrode plates corresponding to each of the recessed regions. The LCOS device further includes a protective layer overlying a surface of each of the plurality of electrode plates, a liquid crystal film overlying the protective layer, and a mirror finish formed on each of the surface of the electrode plates for reflecting light. The mirror finish is substantially free from dishes and scratches from a chemical mechanical polishing process.

Method and structure for fabricating smooth mirrors for liquid crystal on silicon devices

A method for fabricating a liquid crystal on silicon display device. The method includes providing a substrate, e.g., silicon wafer. The method includes forming a transistor layer overlying the substrate. Preferably, the transistor layer has a plurality of MOS devices therein. The method includes forming an interlayer dielectric layer (e.g., BPSG, FSG) overlying the transistor layer. The method includes planarizing the interlayer dielectric layer and forming a sacrificial layer (e.g., bottom antireflective coating, polymide, photoresist, polysilicon) overlying the planarized interlayer dielectric layer. The method includes forming a plurality of recessed regions within a portion of the interlayer dielectric layer through the sacrificial layer while other portions of the interlayer dielectric layer remain intact. Preferably, lithographic techniques are used for forming the recessed regions. The method includes forming an aluminum layer (or other reflective layer or multilayers) to fill the recessed regions and overlying remaining portions of the sacrificial layer and selectively removing the aluminum layer overlying portions of the sacrificial layer to form a plurality of electrode regions corresponding to each of the recessed regions.

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Shanghai, China

Lee Chang