Sematech, Inc.

Martin Marietta Energy Systems, Inc.

Lee A Berry

Chin-Chi Tsai

Steven M Gorbatkin

The present invention describes a technique to control the radial profile of microwave power in an ECR plasma discharge. In order to provide for a uniform plasma density to a specimen, uniform energy absorption by the plasma is desired. By controlling the radial profile of the microwave power transmitted through the microwave window of a reactor, the profile of the transmitted energy to the plasma can be controlled in order to have uniform energy absorption by the plasma. An advantage of controlling the profile using the window transmission characteristics is that variations to the radial profile of microwave power can be made without changing the microwave coupler or reactor design.

Optimized ECR plasma apparatus with varied microwave window thickness

ECR apparatus with magnetic coil for plasma refractive index control

A plasma generating apparatus for plasma processing applications is based on a permanent magnet line-cusp plasma confinement chamber coupled to a compact single-coil microwave waveguide launcher. The device creates an electron cyclotron resonance (ECR) plasma in the launcher and a second ECR plasma is created in the line cusps due to a 0.0875 tesla magnetic field in that region. Additional special magnetic field configuring reduces the magnetic field at the substrate to below 0.001 tesla. The resulting plasma source is capable of producing large-area (20-cm diam), highly uniform (.+-.5%) ion beams with current densities above 5 mA/cm.sup.2. The source has been used to etch photoresist on 5-inch diam silicon wafers with good uniformity.

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Oak Ridge, TN, United States of America

Lee A Berry