Stmicroelectronics S.a.

Le&iuml;la Aitouarab

Sigrid Thomas

In a device for reading memory cells, a precharging circuit is connected to a memory cell to be read and to a reference cell associated with the memory cell to be read. The precharging circuit precharges the output of the differential amplifier to a predetermined voltage level. The reading device further includes an inverter having a high threshold and a low threshold connected to the output of the differential amplifier. The predetermined voltage level corresponds to an intermediate level between the high and low thresholds.

Memory cell read device with a precharge amplifier and associated methods

A voltage-switching device includes a high-voltage translator connected to a high-voltage node receiving either a low-voltage logic level or a high-voltage level as a function of a low-voltage/high-voltage mode control signal to provide at least one output signal as a function of this mode control signal and of a switching control signal. A voltage-level switching circuit is controlled by output signals from the high-voltage translator and by the mode control signal and the switching control signal for application, as output voltage levels, of either ground or the low-voltage logic level in low-voltage mode or the high-voltage level in high-voltage mode.

Growing community of inventors

Grenoble, France

Leïla Aitouarab

Growing community of inventors

Grenoble, France

Le&iuml;la Aitouarab

Leïla Aitouarab