Intel Corporation

Leah Shoer

Tahir Ghani

Biswajeet Guha

Oleg Golonzka

Leonard P Guler

Daniel Ouellette

Mohammad Hasan

Pedro Franco Navarro

Integrated circuit structures having metal gates with tapered plugs, and methods of fabricating integrated circuit structures having metal gates with tapered plugs, are described. For example, includes a fin having a portion protruding above a shallow trench isolation (STI) structure. A gate dielectric material layer is over the protruding portion of the fin and over the STI structure. A conductive gate layer is over the gate dielectric material layer. A conductive gate fill material is over the conductive gate layer. A dielectric gate plug is laterally spaced apart from the fin. The dielectric gate plug is on the STI structure, and the dielectric gate plug has sides tapered outwardly from a top of the dielectric gate plug to a bottom of the dielectric gate plug.

Integrated circuit structures having metal gates with tapered plugs

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Beaverton, OR, United States of America

Leah Shoer