National Chung Shan Institute of Science and Technology

Chung-shan Institute of Science and Technology, Armaments Bureau, M.n.d

Chung-shan Institute of Science and Technology, Armaments, Bureau, Ministry of National Defense

Lea-Hwung Leu

Yang-Kuao Kuo

Yi-Hsiuan Yu

Cheng-Hung Shih

Chen-Chi Martin Ma

Chun-Te Wu

Yang-Kuo Kuo

Ming-Hsiung Wei

Chung-Yen Lu

Kuan-Ting Lai

Chia-Ting Lin

Yung-Han Huang

Bao-Yann Lin

Chin-Peng Wang

Gou-Hong Yiin

A method for preparing spherical aluminum oxynitride powder, comprising the steps of (A) providing an alumina powder and a resin, both of which are then dispersed and dissolved in a solvent to form a mixed slurry; (B) subjecting the mixed slurry to spray drying to form a spherical powder; (C) subjecting the spherical powder to a carbonization treatment under an inert atmosphere to form a carbonized spherical powder; (D) subjecting the carbonized spherical powder to carbothermic reduction in a nitrogen-containing atmosphere at a temperature of 1450&#xb0; C. to 1550&#xb0; C.; (E) keeping the spherical powder that has been subjected to carbothermic reduction in the nitrogen-containing atmosphere to carry out a nitridation reaction at a temperature of 1700&#xb0; C. to 1730&#xb0; C., forming a nitrided spherical aluminum oxynitride powder; (F) subjecting the nitrided spherical aluminum oxynitride powder to decarbonization in an oxygen-containing atmosphere to form the spherical aluminum oxynitride powder.

Method for preparing spherical aluminum oxynitride powder

A method of forming a pattern with high aspect ratio on a polycrystalline aluminum nitride substrate comprises the steps of (A) providing an aluminum nitride substrate and forming a barrier layer on the aluminum nitride substrate; (B) etching the barrier layer with an energy beam to form at least one recess in the barrier layer; (C) plasma etching the substrate to deepen the recess into the aluminum nitride substrate; (D) removing the barrier layer to obtain the aluminum nitride substrate having at least one pattern with high aspect ratio. The method uses the energy beam to directly form a pattern on the barrier layer, and further employs plasma etching to prepare the aluminum nitride substrate having a pattern with high aspect ratio quickly and effectively.

Method of forming pattern with high aspect ratio on polycrystalline aluminum nitride substrate

A method for manufacturing aluminum nitride powder includes steps of: preparing a polymer powder, a wood powder having grain size similar with that of the polymer powder, and an alumina powder; and mixing the polymer powder, the wood powder and the alumina powder uniformly and forming granules to be carried out a single-replacement reaction by exposing the granules in a nitrogen-containing atmosphere at a temperature of 1680-1850&#xb0; C.

Method for manufacturing aluminum nitride powder

Disclosed is an integrated apparatus including an isolative substrate, a plurality of driver chips provided on a side of the isolative substrate, a power supply provided on the side of the isolative substrate and electrically connected to the driver chips, and LED chips provided on another side of the isolative substrate and electrically connected to the driver chips. Thus, the driver chips, the power supply and the LED chips are integrated on the isolative substrate. The production is easy. The integrated apparatus is not vulnerable to surges and lightning strikes. Electromagnetic interferences are reduced. Heat radiation of the integrated apparatus is excellent so that the LED chips are protected from thermal effect.

Integrated apparatus including driver chips, a power supply and LED chips on an isolative substrate

A method for manufacturing a conductive adhesive containing a one-dimensional (1D) conductive nanomaterial is revealed. The method produces a conductive adhesive by mixing the 1D conductive nanomaterial with water-based or solvent-based resin solution. The conductive adhesive has good industrial applications, not influenced by industrial adaptability and environmental adaptability. The conductive adhesive obtained also has better conductivity. Moreover, the amount of the 1D conductive nanomaterial used in the present invention is less than the amount of conductive nanoparticles used and the cost is reduced effectively.

Method for manufacturing conductive adhesive containing one-dimensional conductive nanomaterial

Growing community of inventors

Taoyuan County, Taiwan

Lea-Hwung Leu