Commissariat a L'energie Atomique Et Aux Energies Alternatives

Stmicroelectronics (crolles 2) Sas

Commissariat a L'energie Atomique

Commissariat À L'énergie Atomique Et Aux Énergies Alternatives

Stmicroelectronics S.a.

S.o.i.tec Silicon on Insulator Technologies

Soitec

Lea Di Cioccio

Pierric Gueguen

Bruce Faure

Laurent-Luc Chapelon

Maurice Rivoire

Laurent Vandroux

Sebastien Mermoz

Rachid Taibi

Hubert Moriceau

Mariam G Sadaka

Didier Landru

Jean-Marc Fedeli

Ionut Radu

Christophe Morales

Jean Berthier

Cédrick Chappaz

Jean-Sebastien Moulet

Abdenacer Ait-Mani

Loic Sanchez

Chiara Sabbione

Thomas Magis

Stephanie Huet

Philippe Regreny

Marion Migette

Damien Bordel

Jean-Pierre Nieto

Francois Grossi

Genevieve Grenet

Yann Beilliard

Method of assembly of a first element (I) and a second element (II) each having an assembly surface, at least one of the assembly surfaces comprising recessed metal portions () surrounded by dielectric materials () comprising: A) a step to bring the two assembly surfaces into contact without application of pressure such that direct bonding is obtained between the assembly surfaces, said first and second assemblies (I, II) forming a stack with a given thickness (e), B) a heat treatment step of said stack during which the back faces () of the first (I) and the second (II) elements are held in position so that they are held at a fixed distance (E) between the given stack thickness+/&#x2212;2 nm.

Method of assembly by direct bonding between two elements, each element comprising portions of metal and dielectric materials

A method for self-assembling microelectronic components includes providing a self-aligning substrate having protrusions, each having a thickness greater than 1 &#x3bc;m and an upper face and flanks, the upper face and the flanks being hydrophobic. The method also includes providing dies, each die having a first face and a second hydrophilic face, and providing a self-assembling substrate. Finally, the method includes obtaining, by capillary effect, the self-alignment of each die through the first face thereof on a protrusion of the self-aligning substrate, then obtaining the assembly of the dies through the second hydrophilic face thereof on the self-assembling substrate by direct adhesion. Such a method has application in the industrial production of 3D integrated circuits.

Method for self-assembling microelectronic components

A method for modifying crystalline structure of a copper element with a planar surface, including: a) producing a copper standard having large grains, wherein the standard includes a planar surface, b) reducing roughness of the planar surfaces to a roughness of less than 1 nm, c) cleaning the planar surfaces, d) bringing the two planar surfaces into contact, and e) annealing.

Method for modifying the crystalline structure of a copper element

A method for capillary self-assembly of a plate and a carrier, including: forming an etching mask on a region of a substrate; reactive-ion etching the substrate, the etching using a series of cycles each including isotropic etching followed by surface passivation, wherein a duration of the isotropic etching for each cycle increases from one cycle to another, a ratio between durations of the passivation and etching of each cycle is lower than a ratio for carrying out a vertical anisotropic etching to form a carrier having an upper surface defined by the region and side walls defining an acute angle with the upper surface; removing the etching mask; placing a droplet on the upper surface of the carrier; and placing the plate on the droplet.

Etching method for forming a carrier having inward side walls in particular for confining a droplet for capillary self-assembly

A support is provided, including a reception zone in which the external envelope matches the shape of a plate configured to be placed on a droplet deposited at least in the reception zone in order to achieve capillary self-assembly of the plate and the support, and at least one pair of tracks that extend on the support from the reception zone and that have a lyophilic-type affinity with the droplet such that an overflow of the droplet beyond the reception zone is guided in the tracks, wherein the at least one pair of tracks includes a first track and a second track that do not have the same lyophilic-type degree of affinity with the droplet.

Support for capillary self-assembly with horizontal stabilisation, fabrication method and use

A three-dimensional integrated structure may include two assembled integrated circuits respectively including two metallic lines, and at least two cavities passing through one of the integrated circuits and opening onto two locations respectively in electrical contact with the two metallic lines. The cavities may be sized to place a measuring apparatus at the bottom of the cavities, and in electrical contact with the two locations.

Method for estimating the diffusion length of metallic species within a three-dimensional integrated structure, and corresponding three-dimensional integrated structure

A method for producing at least one photosensitive infrared detector by assembling a first electronic component including plural photodiodes sensitive to infrared radiation and a second electronic component including at least one electronic circuit for reading the plurality of photodiodes, an infrared detector, and an assembly for producing such a detector, the method including: production, on each one of the first and second components, of a connection face formed at least partially by a silicon oxide (SiO2)-based layer; bonding the first component and the second component by the connection faces thereof, thus performing the direct bonding of the two components. The method can simplify hybridization of heterogeneous components for producing an infrared detector.

Method for producing photosensitive infrared detectors

A direct bonding method between at least a first layer () comprising silicon oxide having a thickness equal to or higher than about 10 nm and a second layer () of material having hydrophilicity, comprising at least the steps of:

Method for the direct bonding of a silicon oxide layer

A process of assembly by direct bonding of a first and second element, each having a surface including copper portions separated by a dielectric material, the process includes: polishing the surfaces such that the surfaces to be assembled allow assembly by bonding; forming a diffusion barrier selectively in copper portions of the first and second elements, wherein the surface of the diffusion barrier of the first and second elements is level with the surface, to within less than 5 nanometers; and bringing the two surfaces into contact, such that the copper portions of one surface cover at least partly the copper portions of the other surface, and such that direct bonding is obtained between the surfaces.

Process for direct bonding two elements comprising copper portions and portions of dielectric materials

A method of carrying out a transfer of one or more first components or of a first layer onto a second substrate including: a) application and maintaining, by electrostatic effect, of the one or more first components or of the first layer, on a first substrate, made of a ferroelectric material, electrically charged, b) placing in contact, direct or by molecular adhesion, and transfer of the components or the layer onto a second substrate, and c) dismantling of the first substrate, leaving at least one part of the components or the layer on the second substrate.

Method of transfer by means of a ferroelectric substrate

A method for bonding a first copper element onto a second copper element including forming a crystalline copper layer enriched in oxygen on each of surfaces of each of the first and second elements through which the elements will be in contact, the total thickness of both layers being less than 6 nm, which includes: a) polishing the surfaces so as to obtain a roughness of less than 1 nm RMS, and hydrophilic surfaces, b) cleaning the surfaces to suppress presence of particles due to the polishing and the major portion of corrosion inhibitors, and c) putting both crystalline copper layer enriched in oxygen in contact with each other.

Simplified copper-copper bonding

A method of forming, on a surface of a substrate, at least one hydrophilic attachment area for the purpose of self-assembling a component or a chip, in which a hydrophobic area, which delimits the hydrophilic attachment area, is produced.

Self-assembly of chips on a substrate

Methods of bonding together semiconductor structures include annealing a first metal feature on a first semiconductor structure, bonding the first metal feature to a second metal feature of a second semiconductor structure to form a bonded metal structure that comprises the first metal feature and the second metal feature, and annealing the bonded metal structure. Annealing the first metal feature may comprise subjecting the first metal feature to a pre-bonding thermal budget, and annealing the bonded metal structure may comprise subjecting the bonded metal structure to a post-bonding thermal budget that is less than the pre-bonding thermal budget. Bonded semiconductor structures are fabricated using such methods.

Methods for bonding semiconductor structures involving annealing processes, and bonded semiconductor structures formed using such methods

A method of forming an epitaxially grown layer by forming a region of weakness in a support substrate to define a support portion and a remainder portion on opposite sides of the region of weakness, epitaxially growing an epitaxially grown layer on the support portion after forming the region of weakness but prior to detachment of the support portion from the remainder portion; bonding the epitaxially grown layer to an acceptor substrate before detaching the remainder portion from the support portion; and detaching the remainder portion from the support portion at the region of weakness. The epitaxially grown layer may be removed from the support portion as a free-standing structure.

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Saint Ismier, France

Lea Di Cioccio