Peking University

Hangzhou Weiming Xinke Technology Co.. Ltd

Hangzhou Weiming Xinke Technology., Ltd

Le Ye

Ru Huang

Meng Gao

Yangyuan Wang

Qianqian Huang

Jiayi Wang

Qian Yang

Liang Li

Han Xiao

Zhixuan Wang

Huailin Liao

Guangjun Yu

A connection structure of a thin film electrode and a housing includes at least one thin film electrode unit and a housing; the electrode unit includes a porous thin film, a first electrode and a second electrode attached to two sides of the film; a part of the film and a part of the first electrode form a first electrical connection unit; a part of the film and a part of the second electrode form a second electrical connection unit; at least one installation groove is provided on the inner wall surface of the housing; the electrode unit is provided in the installation groove; at least one communication unit communicated with the installation groove is further provided on the outer wall surface of the housing; the first electrical connection unit and the second electrical connection unit are respectively communicated with an external circuit of the housing through the communication unit.

Connection structure of thin film electrode and housing

Disclosed in the present application are a logic circuit design method and apparatus, and a storage medium. The method comprises: designing and generating an initial MOSFET-TFET hybrid logic circuit, the MOSFET-TFET hybrid logic circuit comprising several logic gates; in the series branch of the initial MOSFET-TFET hybrid logic circuit, replacing a first type of TFET with a MOSFET; the first type of TFET being directly grounded or connected to a power supply and not directly connected to the output ends of the logic gates. The logic circuit design method of the present application overcomes the defect of excessive current attenuation caused by the TFET in the series branch by replacing the first type of TFET in the series branch of the initial logic circuit with a MOSFET. The first type of TFET is a TFET that is directly grounded or connected to a power supply and not directly connected to the output ends of the logic gates.

Logic circuit design method

The present invention relates to the technical field of microfluidics, and specifically relates to an electroosmotic micropump apparatus and an electroosmotic micropump apparatus group. The electroosmotic micropump apparatus in the present invention comprises fluid micro channels and a microneedle electrode; each fluid micro channel is used for communicating a micro flow channel inlet with a micro flow channel outlet for pumping a fluid; the microneedle electrode comprises a first microneedle type electrode and a second microneedle type electrode that are respectively provided at the micro flow channel inlet and the micro flow channel outlet; the first microneedle type electrode and the second microneedle type electrode are oppositely arranged; moreover, neither of the first microneedle type electrode and the second microneedle type electrode is in conduction with the fluid micro channel. The electroosmotic micropump apparatus of the present invention can provide a parallel and uniform electric field for the interior of the fluid micro channel and generate a stable electroosmotic driving force, and can solve the hydrolysis problem of the surface of an electrode, thereby greatly improving the stability of the running of a micropump and prolonging the service life of the micropump.

Electroosmotic micropump apparatus and electroosmotic micropump apparatus group

A CMOS-MEMS humidity sensor includes a complementary metal oxide semiconductor (CMOS) ASIC readout circuit and a microelectromechanical system (MEMS) humidity sensor. The MEMS humidity sensor is provided on the ASIC readout circuit. The ASIC readout circuit includes a substrate, a heating resistor layer located above the substrate, a metal layer located above the heating resistor layer, and dielectric layers. The substrate, the heating resistor layer, and the metal layer are partitioned by dielectric layers. The MEMS humidity sensor includes an aluminum electrode layer, a passivation layer located above the aluminum electrode layer, and a humidity sensitive layer located above the passivation layer. The provision of heating resistors in the ASIC circuit realizes the heating function and satisfies the requirements of the standard CMOS process, so that the CMOS-MEMS integrated humidity sensor can be used stably under low temperature and high humidity conditions.

CMOS-MEMS humidity sensor

A directional coupler is disclosed integrated on a single chip and an integrated circuit based on a standard CMOS process and relates to a field of radio frequency communication. In exemplary implementations, by using a standard CMOS process technology, the directional coupler integrated by a CMOS process is formed by a coil wound by a upper layer of metal lines, a coil wound by a lower layer of metal lines, two tuning capacitor array, and a matching resistor. Two terminals of the coil are a direct terminal and an input terminal; two terminals of the coil are a coupled terminal and an isolation terminal; the terminals of the coils and are intersected at 90&#xb0;; the coil is wound by an upper metal layer and the coil is wound by a lower metal layer. Further, the insertion loss is low and the isolation degree is large.

Directional coupler integrated by CMOS process

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Zhejiang, China

Le Ye