National University of Singapore

Cambridge Enterprise Limited

Basf Se Corporation

Cambridge University Technical Services Limited

Lay-Lay Chua

Richard Henry Friend

Peter Kian-Hoon Ho

Rui-Qi Png

Peter Ho

Perq-Jon Chia

Henning Sirringhaus

Cindy Guan-Yu Tang

Sankaran Sivaramakrishnan

Kian Ping Loh

Mi Zhou

Shuai Wang

Zhi Kuang Tan

Jie Song

Png Rui-Qi

Wei-Ling Seah

Fong Yu Kam

Jie-Cong Tang

Bibin Thomas Anto

Loke-Yuen Wong

Kim Kian Choo

Ghim Siong Goh

Jing-Mei Zhuo

Kian-Hoon Peter Ho

Mervin Chun-Yi Ang

Perq Jon Chia

Siong-Hee Khong

Geok Kieng Lim

Kim-Kian Choo

Peter K-h Ho

Geok-Kieng Lim

Jana Zaumzeil

A composition comprising: an organic semiconductor comprising one or more aromatic or heteroaromatic moieties; one or more cations covalently bonded to the organic semiconductor, or to a second material; and at least one anion donor selected from the class of divalent and higher valent anions; wherein the organic semiconductor has an electron affinity between 1.5 and 4.5 eV.

N-doped electrically conductive organic materials

There is provided a material comprising a n-doped electrically conductive polymer comprising at least one electron-deficient aromatic moiety, each electron-deficient aromatic moiety having a gas-phase electron affinity (E) of 1-3 eV; and at least one counter-cation covalently bonded to the polymer or to a further polymer comprised in the material, the polymer being n-doped to a charge density of 0.1-1 electron per electron-deficient aromatic moiety, the polymer being capable of forming a layer having a vacuum workfunction (WF) of 2.5-4.5 eV, and wherein all the counter-cations comprised in the material are immobilised such that any electron in the polymer cannot significantly diffuse or migrate out of the polymer. There is also provided a method of preparing the material.

n-Doped electrically conductive polymeric material

The present invention discloses a method for transferring a thin film from a first substrate to a second substrate comprising the steps of: providing a transfer structure and a thin film provided on a surface of a first substrate, the transfer structure comprising a support layer and a film contact layer, wherein the transfer structure contacts the thin film; removing the first substrate to obtain the transfer structure with the thin film in contact with the film contact layer; contacting the transfer structure obtained with a surface of a second substrate; and removing the film contact layer, thereby transferring the thin film onto the surface of the second substrate.

Method of transferring thin film

This invention provides a transistor device structure that incorporates a self-aligned doped contact formed by inserting a molecularly-thin layer of bonded anions between the semiconductor and the source-drain electrode array wherein the semiconductor is p-doped at the interface with the bonded-anion layer, and a method of making this structure using oxidant species incorporated into the molecularly-thin layer. The device shows ohmic hole injection and hole extraction at the contacts to give high-performance transistor characteristics with low contact resistance.

Organic field-effect-transistors with low contact resistance

This invention relates to a supported polymer heterostructure and methods of manufacture. The heterostructure is suitable for use in a range of applications which require semiconductor devices, including photovoltaic devices and light-emitting diodes.

Multilayer heterostructures for application in OLEDs and photovoltaic devices

A cross-linking moiety having a general formula I: Ar-W, wherein Arcomprises a fluorinated phenyl azide group having at least one non-fluorine substituent that is bulkier than fluorine at a meta position relative to the azide group, and W comprises an electron-withdrawing group.

Cross-linking moiety

A functionalised graphene oxide and a method of making a functionalized graphene oxide comprising: (i) oxidizing graphite to form graphite oxide wherein the graphene sheets which make up the graphite independently of each other have a basal plane fraction of carbon atoms in the sp-hybridised state between 0.1 and 0.9, wherein the remainder fraction comprises sp-hybridised carbon atoms which are bonded to oxygen groups selected from hydroxyl and/or epoxy and/or carboxylic acid; and (ii) exfoliating and in-situ functionalizing the graphite oxide surface with one or more functional groups such that fictionalization of the surface is effected at a concentration greater than one functional group per 100 carbon atoms and less than one functional group per six carbon atoms. The functionalized graphene oxide is dispersible at high concentrations in appropriate solvents without aggregating or precipitating over extended periods at room temperature.

Functionalised graphene oxide

A method of forming a polymer device including the steps (i) of depositing on a substrate a solution containing a polymer or oligomer and a crosslinking moiety, to form a layer, and, (ii) curing the layer formed in step (i) under conditions to form an insoluble crosslinked polymer, wherein the crosslinking moiety is present in step (i) in an amount in the range of from 0.05 mol % to 5 mol % based on the total number of moles or repeat units of the polymer or oligomer and the crosslinking moiety in the solution.

Manufacture of a polymer device

The present invention provides a conductive composite comprising: suspension matrix, metal nanoparticles suspended within the suspension matrix, wherein the conductive composite has a conductivity greater than 104 S cm.

Electrically conductive composite

There is provided a class of crosslinking compound, said compound comprising (i) one or more fluorinated aromatic group; and (ii) one or more ionizable group, wherein the crosslinking compound is soluble in at least one polar solvent. Methods of preparing the crosslinking compounds are also disclosed. There is further provided devices obtainable from the methods of preparing the crosslinking compounds.

Radiation crosslinker

A transistor including a semiconductive layer; and a gate dielectric layer comprising an insulating polymer, characterised in that the insulating polymer is crosslinked and comprises one or more units having a low cohesive-energy-density and one or more crosslinking groups and the insulating polymer includes substantially no residual &#x2014;OH leaving groups.

Polymer transistor

A method of making a transistor having first and second electrodes, a semiconductive layer, and a dielectric layer; said semiconductive layer comprising a semiconductive polymer and said dielectric layer comprising an insulating polymer; characterised in that said method comprises the steps of:

Method of making a polymer device

An n-channel or ambipolar field-effect transistor including an organic semiconductive layer having an electron affinity EA; and an organic gate dielectric layer forming an interface with the semiconductive layer; characterized in that the bulk concentration of trapping groups in the gate dielectric layer is less than 10cm, where a trapping group is a group having (i) an electron affinity EAgreater than or equal to EAand/or (ii) a reactive electron affinity EAgreater than or equal to (EA&#x2212;2 eV).

Growing community of inventors

Singapore, Singapore

Lay-Lay Chua