United Microelectronics Corp.

Infineon Technologies Austria Ag

Lawrence Y Lin

Water Lur

Der-Yuan Wu

Hong-Tsz Pan

Chun-Jen Weng

Cedric Lee

Yeong-Song Yen

Juan-Yi Chen

Anderson Hsiao

Jackson Lin

Ying-Chung Tseng

Gary Chang

In some embodiments, an inductor-inductor-capacitor (LLC) converter includes a transformer having a primary winding, a secondary winding, and an auxiliary winding. The primary winding is coupled to a primary side circuit and the auxiliary winding has a first winding portion coupled between a first terminal and a middle terminal, and a second winding portion coupled between the middle terminal and a second terminal. The LLC converter further includes a first diode coupled between the first terminal and a first node, a second diode coupled between the second terminal and the first node, and a switch coupled between the first node and a reference voltage terminal. The middle terminal of the auxiliary winding is coupled to the reference voltage terminal.

LLC power converter and switching method thereof

A gap-filling process is provided. A substrate having a dielectric layer thereon is provided. The dielectric layer has an opening therein. A gap-filling material layer is formed over the dielectric layer and inside the opening. A portion of the gap-filling material is removed from the gap-filling material layer to expose the dielectric layer. A gap-filling material treatment of the surface of the gap-filling material layer and the dielectric layer is carried out to planarize the gap-filling material layer so that a subsequently formed bottom anti-reflection coating or material layer over the gap-filling material layer can have a high degree of planarity.

Gap-filling process

A new method of forming device isolation regions on a silicon substrate is provided. This method comprises the following steps: a pad oxide layer is formed on the silicon substrate; a silicon nitride layer is formed on the pad oxide layer; portions of the silicon nitride and pad oxide layers not covered by a mask pattern are etched through and into the silicon substrate so as to provide a plurality of wide and narrow trenches within the silicon substrate that will form the device isolation regions; silicon nitride spacers are formed on the sidewalls of the trenches; a thin oxide layer is grown on all exposed surfaces of the substrate by using thermal oxidation; a first liquid phase deposition oxide layer is formed on the thin oxide layer and is densified by a thermal process to form cracks therein; the silicon nitride layer and silicon nitride spacers are removed through the cracks, wherein the first liquid phase deposition oxide layer over the silicon nitride layer and silicon nitride spacers are also lift-off; the pad oxide layer is then removed; and a second liquid phase deposition oxide layer is formed on the first liquid phase deposition oxide layer so as to fill the trenches.

Device isolation technology by liquid phase deposition

Growing community of inventors

Hsinchu, Taiwan

Lawrence Y Lin