Applied Science & Technology, Inc.

Intel Corporation

Lawrence P Bourget

Richard S Post

Evelio Sevillano

Donald K Smith

Xing Chen

William M Holber

Matthew Mark Besen

Shu Jin

Xiao Chun Mu

A method for forming a material in an opening on a substrate, such as a wafer, using an electron cyclotron resonance-assisted high density plasma physical vapor deposition system. The method comprises the steps of: maintaining a pressure in the range of approximately 1 mTorr to approximately 6 mTorr; generating a plasma by providing a microwave power in the range of approximately 3 kilowatts (kW) to approximately 5 kW; applying a direct current (DC) voltage to a target source of the material in the range of approximately (negative) -600 volts to approximately -1000 volts; providing a current of a predetermined amount to a first electromagnet; and providing a current to a second electromagnet that is less than said predetermined amount, wherein said second electromagnet is disposed below said first electromagnet; and forming a layer of the material in the opening.

High density plasma physical vapor deposition

A microwave plasma deposition source including a vacuum chamber for containing a substance to be energized in a plasma with microwave energy, a coaxial microwave feed ending in the chamber, a sputter target in the chamber and electrically isolated from the coaxial feed, and a second substrate spaced from the sputter target for defining a plasma volume between the substrates.

Microwave plasma deposition source and method of filling high

A process for depositing diamond on a substrate using a microwave plasma generator including introducing a feed which includes diamond forming constituents in a desired ratio to the microwave plasma generator, and providing sufficient microwave power to the microwave plasma generator to produce a greenish-colored plasma which emits a spectrum monitored to maintain a relative emission intensity ratio of two of the constituents in a predetermined range, for depositing high quality diamond at an extremely high rate on the substrate placed proximate or in the plasma.

High growth rate plasma diamond deposition process and method of

A process for depositing diamond on a substrate using a microwave plasma generator including providing carbon, hydrogen and oxygen in a desired ratio to the microwave plasma generator, and providing sufficient microwave power to the microwave plasma generator to produce a greenish-colored plasma with the C.sub.2 emission at 5165 Angstroms (.ANG.) at a level of from 0.5 to 50 times the atomic hydrogen alpha emission level at 6563 .ANG., for depositing high quality diamond at an extremely high rate on the substrate placed proximate or in the plasma.

A process for depositing on a sample surface a smooth, wear-resistant coating including the steps of providing a vacuum processing chamber for holding the sample to be coated, introducing into the processing chamber coating-forming reactants for deposition on the sample surface, and supplying to the processing chamber a plasma stream with an electron temperature of up to 10 eV, a directed ion energy of 5 to 50 eV, and an ion flux at the sample in the range of 0.1 to 100 milliamps per square centimeter for transferring energy to the deposited material to form the smooth coating.

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Winchester, MA, United States of America

Lawrence P Bourget