Timbre Technologies, Inc.

Tokyo Electron Limited

Lawrence Lane

Nickhil Jakatdar

Junwei Bao

Vi Vuong

Srinivas Rao Doddi

Emmanuel Drege

Jason Ferns

Dan Engelhard

Kelly Barry

Dan Prager

Sanjay K Yedur

Xinhui Niu

Daniel Joseph Prager

Michael Laughery

Mike Laughery

Jin Wen

Doris Chin

Specific wavelengths to use in optical metrology of an integrated circuit can be selected using one or more selection criteria and termination criteria. Wavelengths are selected using the selection criteria, and the selection of wavelengths is iterated until the termination criteria are met.

Selection of wavelengths for integrated circuit optical metrology

To evaluate the adequacy of a profile model, an initial profile model is selected. The profile model includes profile model parameters to be measured in implementing types of process control to be used in controlling a fabrication process. A measurement of profile model parameters is obtained using a first metrology tool and the profile model. A measurement of the profile model parameters is obtained using a second metrology tool and the profile model. Statistical metric criteria are calculated based on the measurements of the profile model parameters obtained using the first and second metrology tools. When the calculated statistical metric criteria are not within matching requirements, the profile model is revised. When the calculated statistical metric criteria are within matching requirements, the profile model or the revised profile model is stored.

Optical metrology model optimization for process control

A hypothetical profile is used to model the profile of a structure formed on a semiconductor wafer to use in determining the profile of the structure using optical metrology. To select a hypothetical profile, sample diffraction signals are obtained from measured diffraction signals of structures formed on the wafer, where the sample diffraction signals are a representative sampling of the measured diffraction signals. A hypothetical profile is defined and evaluated using a sample diffraction signal from the obtained sample diffraction signals.

Selecting a hypothetical profile to use in optical metrology

To evaluate the adequacy of a profile model, one or more types of process control to be used in controlling a fabrication process are selected. Profile model parameters and acceptable ranges for the profile model parameters are selected. A first and second metrology tools are selected. Statistical metric criteria that define an acceptable amount of variation in measurements obtained using the first and second tools are set. A profile model is selected. A measurement of the profile model parameters is obtained using the first tool and the selected profile model. A measurement of the one or more profile model parameters is obtained using the second tool. Statistical metric criteria are calculated based on the measurements of the one or more profile model parameters obtained using the first and second tools. The calculated and set statistical metric criteria are compared to evaluate the adequacy of the selected profile model.

A method and system for measuring metal electroplating barrier and seed layer thickness and profile. Using optical metrology, profiles of post-barrier deposition grating and post-seed deposition grating can be measured non-destructively. In turn, the thickness and profile of the barrier layer can be determined by subtracting the profile of the post-barrier deposition grating from the profile of the substrate damascene grating. Similarly, the thickness and profile of the seed layer can be determined by subtracting the profile of the post-seed deposition gratin from the profile of the post-barrier deposition grating.

Measurement of metal electroplating and seed layer thickness and profile

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Lawrence Lane