Motorola Corporation

Lawrence L Case

Barry W Herold

Scott R Humphreys

Raymond Louis Barrett

A first complementary metal oxide semiconductor (CMOS) current reference circuit (100, 500) has a first and a second current mirror (110, 150) and is implemented using one of bulk wafer technology and silicon on insulator (SOI) technology. The first current mirror (110) has an output stage (130) that includes at least one cascode coupled field effect transistor (FET) (125) having one of a source tied well (when implemented using bulk wafer technology) or a source tied body (when implemented using SOI technology). A second CMOS current reference circuit (600, 800) has a first and a second current mirror (650, 610) and is implemented using SOI technology. The first current mirror (650) has a first bias FET (161) having a gate tied body.

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Lake Worth, FL, United States of America

Lawrence L Case