At&t Bell Laboratories

Bell Telephone Laboratories

Lucent Technologies Inc.

Agere Systems Guardian Corp.

Agere System Optoelectronics Guardian Corp.

Lawrence Edwin Smith

Yutaka Okinaka

Michael Geva

Craig G Smith

Utpal Kumar Chakrabarti

Paul A Kohl

Abdallah Ougazzaden

Robert Alan Hamm

Gleb E Shtengel

Claude Lewis Reynolds, Jr

Harvey S Trop

Joseph Brian Seiler

Jayatirtha N Holavanahalli

The present invention provides an optoelectronic device and a method of manufacture therefor, that prevents dopant diffusion and controls the dopant concentration therein. The optoelectronic device includes an active region formed over a substrate, and an interface barrier layer and barrier layer located over the active region. The optoelectronic device further includes an upper cladding layer located over the interface barrier layer and the barrier layer. In an exemplary embodiment of the invention, the interface barrier layer is an indium phosphide interface barrier layer and the barrier layer is an indium gallium arsenide phosphide barrier layer.

Optoelectronic device including a barrier layer and interface barrier layer and a method of manufacture thereof

A diffusion preventing barrier spike is disclosed. The spike prevents diffusion of dopants into another layer without forming a pn junction in the layer. The spikes are illustratively Al or an aluminum containing material such as AlAs and have a thickness on the order of 1 nm. The spikes of the present invention may be used to stop dopant diffusion out of a doped layer in a variety of III-V semiconductor structures, such a InP-based PIN devices.

Diffusion barrier spikes for III-V structures

The invention is an optical device and method of fabrication which mitigates the problem of Zn migration in the cladding and waveguide regions. The contact region includes carbon, which acts as a p-type dopant in ternary semiconductor material. The contact layer is made of InGaAs or InGaAsP, and the invention is most advantageously used in an electroabsorption modulated laser or capped mesa buried heterostructure laser.

Optical device including carbon-doped contact layers

A method for semiconductor device fabrication that uses a mixture of SiCl.sub.4, CF.sub.4, O.sub.2, and He to selectively etch GaAs with respect to AlGaAs. Etch selectivities greater than 300:1 are obtained.

Method for selectively etching AlGaAs

Photoelectrochemical etching of gallium arsenide in highly alkaline aqueous solution yields optically smooth etched surfaces suitable for many optical devices. Higher optical quality is obtained for lower irradiation energy provided sufficient energy is available to produce holes in the valence band.

Etching optical surfaces on GaAs

A copper electroplating process is described in which the anode is surrounded by a cation-permeable membrane so as to prevent decomposition of additives in the electrochemical bath. Such a feature adds to bath lifetime and permits better control of bath chemistry and plating quality during the electroplating process. The feature is especially advantageous for copper electroplating processes using nonconsumable electrodes because of the high consumption of additives and that the copper can be added to the cathode side of the membrane so that acid copper ions need not pass through the membrane.

Copper electroplating process

A process is described for the electrodepositon of copper on various surfaces. The process involves use of a nonconsumable counterelectrode. Of particular significance is the composition of the surface of the counterelectrode. The surface of the counterelectrode comprises iridium oxide and tantalum oxide. Such processes can be carried out at high speeds, with smaller and more efficient equipment and can use various copper compounds as a source of copper.

Copper plating procedure

A synthesis of gold (I) cyanide is described which exhibits high yields and does not yield toxic gases (e.g., HCN). Gold (I) cyanide is important as a source of gold for gold plating baths. A synthesis of AuCN that does not involve evolution of toxic gases (e.g., HCN) is highly advantageous because no disposal problem is involved and the procedure is simpler and more straightforward.

Growing community of inventors

Macungie, PA, United States of America

Lawrence Edwin Smith