Rinehart Motion Systems, LLC

Semipower Systems, Inc.

Other

Ford Global Technolgoies, LLC

Lawrence E Rinehart

Guillermo L Romero

Venkateswara Anand Sankaran

John Michael Miller

Walter Noll

A structurally robust power switching assembly, that has a power transistor, comprising a thin and delicate layer of metal oxide, and a major surface of the layer of metal oxide being substantially coincident with a major surface of the power transistor, the major surface of the power transistor defining both an emitter and a gate. Also, dielectric material is placed over a portion of the emitter, so that it abuts the gate and a highly conductive pillar is constructed out of a relatively soft material, supported by the gate and the dielectric material, so that it has a larger area than would be possible if it was supported only by the gate.

Power switching assembly having a robust gate connection

A structurally robust power switching assembly, comprising a first rigid structural unit that defines a first unit major surface that is patterned to define a plurality of mutually electrically isolated, electrically conductive paths. Also, a similar, second rigid structural unit is spaced apart from the first unit major surface. Finally, a transistor is interposed between and electrically connected to the first unit major surface and the second unit major surface.

Structurally robust power switching assembly

An electrical assembly, comprising a heat producing semiconductor device supported on a first major surface of a direct bond metal substrate that has a set of heat sink protrusions supported by its second major surface. In one preferred embodiment the heat sink protrusions are made of the same metal as is used in the direct bond copper.

Electrical assembly having heat sink protrusions

A multilayer polymer film capacitor block, adapted to accept high currents. At least one multilayer polymer film capacitor is fit into a cavity defined in a rigid, thermally conductive structure. The cavity is sized and shaped to receive said multilayer polymer film capacitor when said capacitor is at a temperature below 40&#xb0; C., but fitting said capacitor in a conformal manner so that as said capacitor is raised to temperatures above 40&#xb0; C., said cavity constrains expansion of said capacitor.

High current-load film capacitor assembly

A method of assembling and providing an electric power apparatus. The method uses a heat resistant housing having a structure adapted to accommodate and retain a power circuit card and also including a bracket adapted to accommodate and constrain a rigid conductive member. A power circuit card having an electrical terminal is placed into the housing and a rigid conductive member into the bracket. The rigid conductive member is flow soldered to the electrical terminal, thereby exposing the heat resistant housing to heat and creating a solder bond. Finally, the rigid conductive member is affirmatively connected to the housing. The bracket constrains the rigid conductive member so that the act of affirmatively connecting does not weaken the solder bond.

Method of assembling an electric power

A heat producing, fluid cooled assembly that includes a housing made of liquid-impermeable material, which defines a fluid inlet and a fluid outlet and an opening. Also included is an electrical package having a set of semiconductor electrical devices supported on a substrate and the second major surface is a heat sink adapted to express heat generated from the electrical apparatus and wherein the second major surface defines a rim that is fit to the opening. Further, the housing is constructed so that as fluid travels from the fluid inlet to the fluid outlet it is constrained to flow past the opening thereby placing the fluid in contact with the heat sink.

Fluid cooled electrical assembly

A power switching module includes a substrate having at least one silicon die forming at least one power switching element and having leadframe terminal posts extending away therefrom. A planar negative rail layer providing a negative power supply and including a non-inductive current shunt resistor formed therein and a planar positive rail layer providing a positive power supply are positioned at the substrate so that the negative rail layer and the positive rail layer are coplanar with respect to each other. A phase output layer providing a phase output signal is also positioned at the substrate. Each of the layers are electrically isolated from each of the other layers and are electrically connected to the substrate.

High power switching module

A substrate assembly for use with a high power switching module includes at least one power block having a base plate for providing mechanical rigidity for the power block. The power block also includes at least one silicon die mounted onto the base plate and configured to form at least one high power switching transistor having leads extending away therefrom. The power blocks are then supportably mounted into corresponding apertures in a rigid frame which mounts the power switching module onto a heat dissipating surface and tested independently before mounting into the frame at full load current and power, which cannot be performed at the bare die level.

Power block assembly and method of making same

An isolated gate driver device for a power switching device having a plurality of transistors includes a primary circuit having a voltage source of a first voltage potential. The primary circuit constantly switches the voltage source to generate first and second load signals based on control signals received from a microcontroller. The first load signal is modulated at a first frequency for enabling the transistors, and the second load signal is modulated at a second frequency, different from the first frequency, for disabling the transistors. A plurality of high frequency transformers corresponding to each of the transistors is coupled to the primary circuit. The transformers have a primary side for receiving one of the first and second load signals and a secondary side for transforming the one of the first and second load signals into corresponding signals at a second voltage potential. A secondary circuit coupled between each of the transformers and each of the corresponding transistors provides a bias power supply to each of the transistors at the second voltage potential. The secondary circuit also enables and disables each of the transistors based on the first and second load signals.

Isolated gate driver for power switching device and method for carrying

A physical construction of an inverter of the type having a positive voltage line and a negative voltage line interconnected by one or more switch sections. Each section includes two switch circuits, each having a transistor in parallel with a diode. The two switch circuits are connected in series, with the connection between the circuits providing an output to drive a load. The positive voltage line includes a positive voltage rail positioned closely to a negative voltage rail which is part of the negative voltage line. The close proximity of the two rails causes an electrical coupling between the positive and negative voltage lines. Current paths including circuit traces and bond wires within the inverter are arranged to place paths having oppositely directed currents, or equal and opposite di/dt's, in close parallel proximity resulting in mutual coupling and reduction in parasitic inductances. This construction results in a substantial reduction in the inductances of the various lines, with a corresponding reduction in switching voltage peaks, and an increased power and operational frequency capability.

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West Linn, OR, United States of America

Lawrence E Rinehart