Applied Materials, Inc.

Archers Inc.

Other

Dual Helios Semiconductor Equipment Company, Inc.

Lawrence Chung-Lai Lei

Hua Chung

Alfred W Mak

Jeong Soo Byun

Ming Xi

Moris Kori

Salvador P Umotoy

Ashok K Sinha

Barry Lee Chin

Ken Kaung Lai

Ronald Lloyd Rose

Xiaoming Wang

Alfred Mak

Rex Liu

Kon Park

Tzy-Chung Terry Wu

Simon Zhu

Gene Shin

Avi Tepman

Joel M Huston

Samuel S Pak

Xiaoxiong Yuan

Anh Ngoc Nguyen

Son Trinh

Russell C Ellwanger

Hongbee Teoh

Be Van Vo

James Jin-Long Chen

Avgerinos V Gelatos

Vincent W Ku

Chien-Teh Kao

Anzhong Chang

Won B Bang

Yen-Kun Victor Wang

Siqing Lu

Michael Sterling Jackson

Sergio Edelstein

Kenneth Tsai

Steve H Chiao

Sal Umotoy

Steven E Gianoulakis

James J Chen

David Sun

Mark M Hytros

Ron L Rose

Truc T Tran

Eric W Schieve

Gwo-chun Tzu

Xiangxiong (John) Yuan

Hymam Lam

A system for wafer processing, includes: a frame comprising a frame opening; and a membrane configured to couple to the frame and to cover at least a part of the frame opening, the membrane comprising a membrane opening, wherein the membrane opening has a membrane opening area that is equal to or less than a frame opening area of the frame opening; wherein the membrane is configured for coupling with the wafer, wherein when the wafer is coupled with the membrane, the wafer covers the membrane opening, and wherein the membrane is configured to maintain the wafer at a certain position with respect to the frame; and wherein the membrane opening area is less than a total area of the wafer.

Systems and methods for making solar panels or components thereof

A conveying device for conveying at least a first row of substrates and a second row of substrates, includes: a conveying fork having a main body and a plurality of branches, a first end of each of the branches is connected to the main body, and a second end of each of the branches is a free end; wherein a first branch of the plurality branches has a first plurality of grooves, and a second branch of the plurality of branches has a second plurality of grooves; and wherein one of the first plurality of grooves and one of the second plurality of grooves are configured to support one of the substrates in the first row.

Substrate processing system, substrate conveying device and conveying method

A device for manipulating at least a first row of wafers and a second row of wafers, includes: a first holder configured to hold the first row of wafers, the first holder having a first rod and a second rod, the first rod and the second rod of the first holder defining a space therebetween for accommodating the first row of wafers, wherein a distance between the first rod and the second rod of the first holder is variable; and a second holder configured to hold the second row of wafers, the second holder having a first rod and a second rod, the first rod and the second rod of the second holder defining a space therebetween for accommodating the second row of wafers, wherein a distance between the first rod and the second rod of the second holder is variable.

Apparatus and method of selective turning over a row of substrates in an array of substrates in a processing system

A method and apparatus for atomic layer deposition (ALD) is described. In one embodiment, an apparatus comprises a vacuum chamber body having a contiguous internal volume comprised of a first deposition region spaced-apart from a second deposition region, the chamber body having a feature operable to minimize intermixing of gases between the first and the second deposition regions, a first gas port formed in the chamber body and positioned to pulse gas preferentially to the first deposition region to enable a first deposition process to be performed in the first deposition region, and a second gas port formed in the chamber body and positioned to pulse gas preferentially to the second deposition region to enable a second deposition process to be performed in the second deposition region is provided.

Atomic layer deposition apparatus

In accordance with some embodiments described herein, a method for transferring a substrate is provided. The method includes loading one or more substrates into a respective mobile chamber of one or more mobile chambers. The mobile chambers are movable on a first rail positioned adjacent to two or more process modules. Each mobile chamber is configured to maintain a specified gas condition. The respective mobile chamber is moved along the first rail. The respective mobile chamber is docked to a respective process module of the two or more process modules. At least one of the one or more substrates is conveyed from the respective mobile chamber to the respective process module.

Methods and systems of transferring, docking and processing substrates

In accordance with some embodiments described herein, a method for transferring a substrate to two or more process modules is provided, comprising loading at least one substrate into one or more mobile transverse chambers, the mobile transverse chambers being carried on a rail positioned adjacent to the two or more process modules, and wherein each mobile transverse chamber is configured to maintain a specified gas condition during conveyance of the substrate. One or more drive systems are actuated to propel at least one of the one or more mobile transverse chambers along the rail. The at least one mobile transfer chamber docks to at least one of the process modules, and the substrate is conveyed from the mobile transverse chamber to the at least one process modules.

A method of transferring one or more substrates between process modules or load lock stations while minimizing heat loss is provided. In some embodiments the method comprising the steps of: identifying a destination location Dfor a substrate Spresent at an initial processing location P; if the destination location Dis occupied with a substrate S, maintaining the substrate S1 at the initial processing location P; and if the destination location Dis available, transferring the substrate Sto the destination location D. In accordance with additional embodiments, the method is carried out on a system for processing substrates which includes two or more process modules, a substrate handling robot, a load lock chamber, and a transverse substrate handler. The transverse substrate handler includes mobile transverse chambers configured to convey substrates to process modules, wherein each mobile transverse chamber is configured to maintain a specified gas condition during the conveyance of the substrates. The transverse substrate handler further includes a rail for supporting the mobile transverse chambers, wherein the rail is positioned adjacent to entry of the process modules, and drive systems for moving the mobile transverse chambers on the rail.

Methods and systems of transferring a substrate to minimize heat loss

A method and apparatus for atomic layer deposition (ALD) is described. The apparatus comprises a deposition chamber and a wafer support. The deposition chamber is divided into two or more deposition regions that are integrally connected one to another. The wafer support is movable between the two or more interconnected deposition regions within the deposition chamber.

In one embodiment, a method for forming a tungsten material on a substrate surface is provide which includes positioning a substrate within a deposition chamber, heating the substrate to a deposition temperature, and exposing the substrate sequentially to diborane and a tungsten precursor gas to form a tungsten nucleation layer on the substrate during an atomic layer deposition (ALD) process. The method further provides exposing the substrate to a deposition gas comprising hydrogen gas and the tungsten precursor gas to form a tungsten bulk layer over the tungsten nucleation layer during a chemical vapor deposition (CVD) process. Examples are provided which include ALD and CVD processes that may be conducted in the same deposition chamber or in different deposition chambers.

Method for forming tungsten materials during vapor deposition processes

Techniques of the present invention are directed to distribution of deposition gases onto a substrate. In one embodiment, a gas distributor for use in a processing chamber is provided. The gas distributor includes a body having a gas deflecting surface and a gas distributor face. The gas deflecting surface defines a cleaning gas pathway. The gas distributor face is disposed on an opposite side of the body from the gas deflecting surface and faces toward a substrate support member. The gas distributor face includes a raised step and at least one set of apertures through the raised step. The at least one set of apertures are adapted to distribute a deposition gas over a substrate positioned on the substrate support member.

Gas baffle and distributor for semiconductor processing chamber

A substrate support comprises top, middle and bottom plates which are brazed together. The top plate has a top surface with a plurality of outwardly projecting mesas dispersed across a recessed pocket, a network of recessed grooves, a vacuum port terminating in the recessed grooves, and plurality of gas ports. The middle plate has a plurality of middle feedthroughs aligned to corresponding top feedthroughs of the top plate, and the bottom plate has a plurality of bottom feedthroughs aligned to the middle feedthroughs of the middle plate. The top and middle plates are joined by a first brazed bond layer and the middle and bottom plates are joined by a second brazed bond layer.

Substrate support having brazed plates and resistance heater

Growing community of inventors

Milpitas, CA, United States of America

Lawrence Chung-Lai Lei