Imec

Laurent Souriau

Mikhail Rodionovich Baklanov

Quoc Toan Le

Valentina Terzieva

Patrick Verdonck

Methods for fabricating porous low-k materials are provided, such as plasma enhanced chemically vapor deposited (PE-CVD) and chemically vapor deposited (CVD) low-k films used as dielectric materials in between interconnect structures in semiconductor devices. More specifically, a new method is provided which results in a low-k material with significant improved chemical stability and improved elastic modulus, for a porosity obtained.

Fabrication of porogen residues free low-k materials with improved mechanical and chemical resistance

The present invention provides an etching solution for revealing defects in a germanium layer, a method for revealing defects in a germanium layer using such an etching solution and to a method for making such an etching solution. The etching solution according to embodiments of the present invention is able to exhibit an etch rate of between 4 nm&#xb7;minand 450 nm&#xb7;min, which makes it suitable to be used for revealing defects in a thin layer of germanium, i.e. in a layer of germanium with a thickness of between 20 nm and 10 &#x3bc;m, for example between 20 nm and 2 &#x3bc;m, between 20 nm and 1 &#x3bc;m or between 20 nm and 200 nm.

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Leuven, Belgium

Laurent Souriau