Societe Francaise De Detecteurs Infrarouges-sofradir

Stmicroelectronics S.a.

Lynred

Laurent Rubaldo

Didier Dutartre

Alexandre Talbot

Nicolas J Loubet

Michel Zecri

Nicolas Ricard

Alexandru Nedelcu

Patrick Maillart

Alexandre Maltere

Nicolas Pere Laperne

Alexandre Kerlain

Ricard Nicolas

Michel Zécri

The photodetector includes a photon absorbing region formed by a first semiconductor material having a first bandgap energy value. It also includes a blocking region formed by at least second and third semiconductor materials configured to prevent the majority charge carriers from passing between the photon absorbing region and a contact region, the second semiconductor material presenting a second bandgap energy value higher than the first bandgap energy value to form a quantum well with the third semiconductor material. The blocking region is doped.

Photodetector with reduced dark current

The detection circuit comprises a switch connected between a photodiode and an integrator. It further comprises means for alternately switching bias conditions of the photodiode between a reverse bias and another state. The electronic traps in the photodiode are regularly passivated during the other state.

Detection circuit including a noise reducing module having a switch connected between a photodiode and an integrating circuit

A pixel comprises a photodetector and a control circuit. The pixel is provided with an output terminal designed to connect an analysis circuit. The photodetector is configured to have two different operating modes associated with different biasing conditions. A switch connecting the photodetector to the output terminal of the pixel and a circuit for a connecting/disconnecting the control circuit with the output terminal of the pixel and with the photodetector allow to switch between the two operating modes. A comparator compares the voltage across the capacitive load with respect to a threshold value and outputs first and second signals according to the comparison. The comparator is connected to the circuit for connecting/disconnecting the control circuit and to the switch.

Radiation detection device with improved illumination range having a photodetector that operates in two detecting modes

In an infrared detector provided with a photodiode, when the temperature of the photodiode is lowered to its operating temperature, the photodiode is forward biased. During forward biasing of the photodiode, injection of a majority carrier current takes place through the photodiode. The majority carriers mask a part of the defects of the photodiode. The acquisition phase is then performed by reverse biasing the photodiode.

Method for putting a cooled infrared detector into operation

Silicon-based single-crystal portions are produced on a surface of a substrate, selectively in zones where a single-crystal material is initially exposed. To do this, a layer is firstly formed over the entire surface of the substrate, using a silicon precursor of the non-chlorinated hydride type, and under suitable conditions so that the layer is a single-crystal layer in the zones of the substrate where a single-crystal material is initially exposed and amorphous outside these zones. The amorphous portions of the layer are then selectively etched so that only the single-crystal portions of the layer remain on the substrate.

Process for forming a silicon-based single-crystal portion

A method for selectively etching single-crystal silicon-germanium in the presence of single-crystal silicon, including a chemical etch based on hydrochloric acid in gaseous phase at a temperature lower than approximately 700&#xb0; C.

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Fontaine, France

Laurent Rubaldo