Ion Beam Services

Silios Technologies

Cnm - Csic

Laurent Roux

Frank Torregrosa

Vincent Sauget

Marc Hubert

Stéphane Tisserand

Aurélien Faiola

Stephane Tisserand

Ludovic Escoubas

Philippe Godignon

Fabien Reversat

Frank Torregrossa

Emmanuel Drouard

Francois Flory

A multispectral imager is provided, designed for analyzing a spectral domain of interest, comprising an image sensor formed of an array of macropixels and comprising a first and a second photosensitive pixel respectively dedicated to a first and a second spectral band, and a filtering structure comprising a first and second interference filter which are superimposed respectively on the first and second photosensitive pixel and which are arranged to respectively transmit a first and second electromagnetic radiation belonging respectively to the first and second spectral bands, the multispectral imager in which a wavelength half of that of the second electromagnetic radiation is located in the spectral domain of interest, and a filtering layer is superimposed on the second photosensitive pixel and configured to block the passage of a third electromagnetic radiation of wavelength half that of the second electromagnetic radiation.

Multispectral imager with enlarged spectral domain

A MOSFET device arranged on a substratehaving first and second heavily-doped stripsandrespectively covered by first and second contactsand, these two strips being spaced apart by a channelthat also appears on the substrate, the channel being covered by a dielectric layer, itself surmounted by a third contact. The channelincorporates a thin filmlightly doped with dopant atoms of a same type as the channel, at the interface with the dielectric layer, the dopant atoms being distributed on both sides of the interface.

Device for improving the mobility of carriers in a MOSFET channel on silicon carbide

A hybrid multispectral imaging sensor, characterized in that it comprises a photosensitive backside-illumination detector (DET) that is made on a substrate () made of InP, and that is formed of a matrix of pixels (, P, P, P) that are themselves made in a structure based on InGaAs (), and a filter module (MF) that is formed of a matrix of elementary filters (λ) reproducing said matrix of pixels, and that is mounted into contact with said substrate (), said substrate () made of InP having a thickness less than 50 μm, and preferably less than 30 μm.

Multispectral imaging sensor provided with means for limiting crosstalk

A method of limiting cross-talk in an imaging sensor, the sensor being in the form of a matrix of macropixels defining an image, each macropixel being formed by a matrix of individual pixels, each of which is dedicated to a distinct spectral band, all of the individual pixels dedicated to the same spectral band forming a sub-image, the image being topologically subdivided into at least one parcel, and the method including the following steps: measuring the spectral response of each individual pixel &#x3bb;; calculating the mean spectral response of each sub-image in a parcel; targeting to define the ideal response of each sub-image in the parcel; estimating a series of coefficients for minimizing cross-talk in the parcel; and applying the coefficients to the macropixels in order to correct the sub-images in the parcel. The method is remarkable in that the ideal response is a Gaussian function.

Method for limiting crosstalk in an image sensor

The invention relates to a multispectral imaging device including: a photosensitive detector DET made up of a matrix of pixels; an array of microlenses ML, ML, MLreproducing the matrix of pixels; and a filter module MF formed by a matrix of individual filters &#x3bb;reproducing the matrix of pixels. The device is remarkable in that the array of microlenses is arranged directly in contact with the detector DET, and the filter module MF is made on a substrate SS that is put into contact with the array of microlenses.

Multispectral imaging device with array of microlenses

The present invention provides a support that comprises: The support also has at least one electrically conductive element--for connecting the bearing plane to the shoulder

Support including an electrostatic substrate carrier

A method of controlling an implanter operating in plasma immersion, the method including the steps of: The method is remarkable in that the duration of the expulsion stage is longer than 5 &#x3bc;s. The invention also provides a power supply for biasing an implanter.

Method of controlling an implanter operating in plasma immersion

The present invention relates to a support comprising: The support is remarkable in that the substrate carrier () incorporates a heating resistance ().

Electrostatic heating substrate holder which is polarised at high voltage

The present invention relates to a method of controlling an ion implanter having a plasma power supply AP and a substrate power supply, the substrate power supply comprising:

Method of controlling an ion implanter in plasma immersion mode

An ion implantation machine includes an enclosure that is connected to a pump device, a negatively polarized substrate-carrier that is arranged inside the enclosure, and a plasma feed device in the form of a generally cylindrical body extending between an initial section and a terminal section, the device having a main chamber provided with an ionization cell, the main chamber being provided with a gas delivery orifice, and the final section of the main chamber being provided with a head-loss component for creating a pressure drop relative to the body. Furthermore, the plasma feed device also includes an auxiliary chamber arranged beyond the final section, the auxiliary chamber opening out into the enclosure at the terminal section.

Machine for implanting ions in plasma immersion mode for a low-pressure method

The present invention relates to an ion implantation machinethat comprises: The machine is remarkable in that:

Ion implantation machine presenting increased productivity

The invention relates to an ion implanter that comprises an enclosure ENV having arranged therein a substrate carrier PPS connected to a substrate power supply ALT via a high voltage electrical passage PET, the enclosure ENV being provided with pump means PP, PS, the enclosure ENV also having at least two cylindrical source bodies CS, CSfree from any obstacle and arranged facing the substrate carrier. This implanter is remarkable in that it includes at least one confinement coil BCI-BCS, BCI-BCSper source body CS, CS

Ion implanter provided with a plurality of plasma source bodies

A control module for an ion implanter having a power supply, the power supply comprising: an electricity generator HT having its positive pole connected to ground; a first switch SWhaving its first pole connected to the negative pole of the generator HT and having its second pole connected to the outlet terminal S of the power supply; and a second switch SWhaving its first pole connected to the outlet terminal S and having its second pole connected to a neutralization terminal N. The control module also comprises a current measurement circuit AMP for measuring the current that flows between the second pole of the second switch SWand the neutralization terminal N.

Control module for an ion implanter

The present invention relates to a dose-measurement device for ion implantation, the device comprising a module CUR for estimating implantation current, a secondary electron detector DSE, and a control circuit CC for estimating the ion current by taking the difference between said implantation current and the current from said secondary electron detector. Furthermore, said high-energy secondary electron detector comprises a collector COL, P supporting exactly three mutually insulated electrodes:

Growing community of inventors

Marseilles, France

Laurent Roux