University System of Maryland

Ultratech, Inc.

Laurent Lecordier

Gary W Rubloff

Sang Bok Lee

Parag Banerjee

Israel Perez

Xinyi Chen

Chanyuan Liu

Eleanor Gillette

Methods of forming an ALD-inhibiting layer using a layer of SAM molecules include providing a metalized substrate having a metal M and an oxide layer of the metal M. A reduction gas that includes a metal Q is used to reduce the oxide layer of the metal M, leaving a layer of form of M+MQOatop the metal M. The SAM molecules are provided as a vapor and form an ALD-inhibiting SAM layer on the M+MQOlayer. Methods of performing S-ALD using the ALD-inhibiting SAM layer are also disclosed.

Methods of forming an ALD-inhibiting layer using a self-assembled monolayer

An apparatus, system, and method are provided for a vertical two-terminal nanotube or microtube device configured to capture and generate energy, to store electrical energy, and to integrate these functions with power management circuitry. The vertical device can include a column disposed in a template material extending from one side of the template material to the other side of the template material. Further, the device can include a first material disposed within the column, a second material disposed within the column, and a third material disposed in the column. A variety of configurations, variations, and modifications are provided.

Nanodevice arrays for electrical energy storage, capture and management and method for their formation

An apparatus, system, and method are provided for a vertical two-terminal nanotube device configured to capture and generate energy, to store electrical energy, and to integrate these functions with power management circuitry. The vertical nanotube device can include a column disposed in an anodic oxide material extending from a first distal end of the anodic oxide material to a second distal end of the anodic oxide material. Further, the vertical nanotube device can include a first material disposed within the column, a second material disposed within the column, and a third material disposed between the first material and the second material. The first material fills the first distal end of the column and extends to the second distal end of the column along inner walls of the column. The second material fills the first distal end of the column and extends to the second distal end of the column within the first material. Both the first material and the second material are exposed at the first distal end of the column.

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Somerville, MA, United States of America

Laurent Lecordier