Stmicroelectronics (Crolles 2) Sas

Koninklijke Philips Corporation N.v.

Nxp B.v.

Stmicroelectronics (Corlles 2) Sas

Laurent-Georges Gosset

Joaquin Torres

Sonarith Chhun

Vincent Arnal

Alexis Farcy

Maryline Thomas

Wim Besling

The present invention provides an improved method of forming air cavities to overcome IC via-misalignment issues. The method of forming air cavity trenches in-between metal lines of an integrated circuit includes the steps of partially removing () an intertrack dielectric deposited on an interconnect structure surface to control the height between the top surface of a metal line of the interconnect surface and the surface of the intertrack dielectric; depositing () a dielectric liner on the interconnect surface; removing () at least part of the dielectric liner on the interconnect surface; successively repeating () the deposition of the dielectric liner and the removal of the dielectric liner on the interconnect surface in so far as the interconnect surface is sufficiently protected by a remaining dielectric liner for forming of the plurality of air cavity trenches; and forming () at least one air cavity trench in-between the metal lines by etching the intertrack dielectric material.

Integration of self-aligned trenches in-between metal lines

A method of forming a metal-insulator-metal capacitor having top and bottom plates separated by a dielectric layer, one of the top and bottom plates having at least one protrusion extending into a corresponding cavity in the other of the top and bottom plates, the method including the steps of growing one or more nanofibers on a base surface.

MIM capacitor with enhanced capacitance

A semiconductor device includes an interconnect having electrically conductive portions and a dielectric layer made of a first dielectric material. A trench is formed in the dielectric layer. The exposed portions of the dielectric layer which form the side walls of the trench are removed. A dielectric liner is then deposited on the side walls of the trench, the liner being made of a second dielectric material.

Method for forming metal interconnects in a dielectric material

Properties of a hard mask liner are used against the diffusion of a removal agent to prevent air cavity formation in specific areas of an interconnect stack. According to one embodiment, there is provided a method in which there is defined a portion on a surface of an IC interconnect stack as being specific to air cavity introduction, with the defined portion being smaller than the surface of the substrate. At least one metal track is produced within the interconnect stack, and there is deposited at least one interconnect layer having a sacrificial material and a permeable material within the interconnect stack. There is defined at least one trench area surrounding the defined portion and forming at least one trench, and a hard mask layer is deposited to coat the trench. At least one air cavity is formed below the defined portion of the surface by using a removal agent for removing the sacrificial material to which the permanent material is resistant.

Controlling lateral distribution of air gaps in interconnects

A capacitor formed in an insulating porous material.

MIM capacitor

An improved semiconductor device, integrated circuit, and integrated circuit fabrication method introduce highly controlled air cavities within high-speed copper interconnects. A polymer material is introduced on the edges of interconnect lines and vias within an interconnect stack. This incorporates and controls air cavities formation, thus enhancing the signal propagation performance of the semiconductor interconnects.

Growing community of inventors

Crolles, France

Laurent-Georges Gosset