Societe Francaise De Detecteurs Infrarouges-sofradir

Lynred

Laurent Baud

Alexandre Maltere

The multispectral detection device comprises first and second photodetectors sensitive to two different wavelengths. The two photodetectors are connected to two integration capacitors of two different readout circuits. Two reset circuits are configured so as to initialise the two integration capacitors separately. A first synchronisation circuit is connected to the first readout circuit and to the synchronisation signal and clock signal generators. The first synchronisation circuit is configured in such a way as to

Multispectral detection device

The detection circuit comprises a photodiode connected to an input of a capacitive transimpedance amplifier. The circuit comprises an anti-blooming circuit connected between the input and an output of the capacitive transimpedance amplifier. The anti-blooming circuit comprises a field effect transistor connected between the input and output of the capacitive transimpedance amplifier. The transistor is of pMOS type when the input of the capacitive transimpedance amplifier is connected to a cathode of the photodiode. The transistor is of nMOS type when the input of the capacitive transimpedance amplifier is connected to an anode of the photodiode.

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Bevenais, France

Laurent Baud