Stmicroelectronics(tours) Sas

Stmicroelectronics (rousset) Sas

Laurent Barreau

Vincent Jarry

Marc Feron

Pierre Bouillon

Patrick Hougron

Patrick Hauttecoeur

Christophe Serre

Benoit Riou

Benoît Riou

A method for encapsulating a thin-film lithium-ion type battery, including the steps of: forming, on a substrate, an active stack having as a lower layer a cathode collector layer extending over a surface area larger than the surface area of the other layers; forming, over the structure, a passivation layer including through openings at locations intended to receive anode collector and cathode collector contacts; forming first and second separate portions of an under-bump metallization, the first portions being located on the walls and the bottom of the openings, the second portions covering the passivation layer; and forming an encapsulation layer over the entire structure.

Method of direct encapsulation of a thin-film lithium-ion type battery on the substrate

A method for encapsulating electronic components, including the steps of: forming, in a first surface of a semiconductor wafer, electronic components; forming, on the first surface, an interconnection stack including conductive tracks and vias separated by an insulating material; forming first and second bonding pads on the interconnection stack; thinning down the wafer, except at least on its contour; filling the thinned-down region with a first resin layer; arranging at least one first chip on the first bonding pads and forming solder bumps on the second bonding pads; depositing a second resin layer covering the first chips and partially covering the solder bumps; bonding an adhesive strip on the first resin layer; and scribing the structure into individual chips.

Method for encapsulating electronic components on a wafer

A silicon chip surface mounted via balls attached to its front surface, wherein the front and rear surfaces of the chip are covered with a thermosetting epoxy resin having the following characteristics: the resin contains a proportion ranging from 45 to 60% by weight of a load formed of carbon fiber particles with a maximum size of 20 &#x3bc;m and with its largest portion having a diameter ranging between 2 and 8 &#x3bc;m, on the front surface side, the loaded resin covers from 45 to 60% of the ball height, on the rear surface side, the loaded resin has a thickness ranging between 80 and 150 &#x3bc;m.

Surface-mounted silicon chip

Growing community of inventors

Cinq Mars la Pile, France

Laurent Barreau