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Laurens Franz Taemsz Kwakman

Mark Utlaut

N William Parker

Thomas Gary Miller

Pleun Dona

Hendrik Nicolaas Slingerland

Uwe Luecken

Jorge Filevich

Gerbert Jeroen Van De Water

Hervé-William Rémigy

Guillaume Audoit

Martin Verheijen

Kars Z Troost

Stephanus Hubertus Leonardus Van Den Boom

Guillaume Delpy

An x-ray target, a method of using the x-ray target, and a computer program product with instructions for carrying out a method of using the x-ray target. The x-ray target includes a substrate made from a soft x-ray producing material and a high aspect ratio structure made from a hard x-ray producing material. The hard x-ray producing material is embedded in the substrate, formed on the substrate, cantilevered out from the edge of the substrate, or any combination thereof. The high aspect ratio structure comprises a plurality of high aspect ratio structures arranged in one or more grids or arrays, and the high aspect ratio structures in one of the one or more grids or arrays are arranged to form a Hadamard matrix structure.

High aspect ratio X-ray targets and uses of same

Sample pillars for x-ray tomography or other tomography scanning are created using an innovative milling strategy on a Plasma-FIB. The strategies are provided in methods, systems, and program products executable to perform the strategies herein. The milling strategy creates an asymmetrical crater around a sample pillar, and provides a single cut cut-free process. Various embodiments may include tuning the ion dose as a function of pixel coordinates along with optimization of the beam scan and crater geometries, drastically reducing the preparation time and significantly improving the overall workflow efficiency. A novel cut-free milling pattern is provided with a crescent shape and optimized dwell-time values.

Tomography sample preparation systems and methods with improved speed, automation, and reliability

High aspect ratio x-ray targets and uses of same

A method of determining the temperature of a sample carrier in a charged particle-optical apparatus, characterized in that the method comprises the observation of the sample carrier with a beam of charged particles, the observation giving information about the temperature of the sample carrier. The invention is based on the insight that a charged particle optical apparatus, such as a TEM, STEM, SEM or FIB, can be used to observe temperature related changes of a sample carrier. The changes may be mechanical changes (e.g. of a bimetal), crystallographic changes (e.g. of a perovskite), and luminescent changes (in intensity or decay time). In a preferred embodiment the sample carrier shows two bimetals, showing metals with different thermal expansion coefficients, bending in opposite directions. The distance between the two bimetals is used as a thermometer.

Method of measuring the temperature of a sample carrier in a charged particle-optical apparatus

Samples such as semiconductor wafers may be subjected to an elementary analysis by irradiation by means of electrons and measurement of the X-rays generated in the sample. In order to achieve a high spatial resolution, two adjacent holes are formed in the sample surface, leaving a very thin separating wall between said holes and hence limiting the dimension of the interaction volume However, electrons pass through the wall, thus generating disturbing X-rays in the walls of the hole behind the wall. According to the invention the hole behind the separating wall is provided with a stopping material of an elementary composition which deviates from that of the wall If the wall to be analyzed contains silicon, the stopping material should preferably be platinum or carbon.

Method of X-ray analysis in a particle-optical apparatus

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St. Ismier, France

Laurens Franz Taemsz Kwakman