Stmicroelectronics (research & Development) Limited

Stmicroelectronics (grenoble 2) Sas

Stmicroelectronics Gmbh

Laurence Stark

Jeffrey M Raynor

Graeme Storm

Christophe Mandier

William Halliday

Alexandre Balmefrezol

Filip Kaklin

An embodiment method of manufacturing an avalanche diode includes forming a first trench in a substrate material, filling the first trench with a first material that comprises a dopant, and causing the dopant to diffuse from the first trench to form part of a PN junction. An avalanche diode array can be formed to include a number of the avalanche diodes.

Avalanche diode along with vertical PN junction and method for manufacturing the same field

Various embodiments provide a control circuit that includes at least one active module designed to enable an avalanche diode. The control circuit also includes at least one passive module designed to disable the avalanche diode.

Control circuit and method of operating a control circuit

The present disclosure relates to an avalanche diode including at least one PN junction; at least one depletion structure located adjacent to the PN junction and configured to form a depletion region; and at least two electrodes to polarize the at least one PN junction.

Avalanche diode and method of manufacturing an avalanche diode

An integrated circuit includes a substrate and at least one photo-voltaic cell implemented on the substrate. The at least one photo-voltaic cell is configured to generate a supply voltage. Circuitry is implemented on the substrate. The circuitry is powered by the supply voltage. The at least one photo-voltaic cell can include a number of series-connected photo-voltaic cells.

Zero power sensors

A charge storage cell includes a semiconductor region having charge carriers of a first conductivity type, a first deep trench isolation structure, and a charge storage region located adjacent to the first deep trench isolation structure. The charge storage region has charge carriers of a second conductivity type different to the first conductivity type and extends along substantially all of the first deep trench isolation structure. A second deep trench isolation structure is located adjacent to the charge storage region and opposite the first deep trench isolation structure.

Charge storage cell and method of manufacturing a charge storage cell

A photosensitive diode has an anode terminal and a cathode terminal. A passive quench resistance circuit includes a resistor with a variable resistance that is controlled by a control signal. The resistor is electrically connected to the cathode terminal. The resistor of the passive quench resistance circuit is formed by a first semiconductor region. The control signal is applied to a control gate of the passive quench resistance circuit. The control gate is formed by a second semiconductor region that is insulated from the first semiconductor region and extends parallel to the first semiconductor region. The voltage of the control signal applied to the control gate controls the variable resistance.

Single photon avalanche diode (SPAD) with variable quench resistor

An avalanche diode includes a PN junction with a first deep trench structure adjacent to the PN junction. An area via which photons impinge is provided, the PN junction extending substantially vertically with respect to the area. An avalanche diode array can be formed to include a number of avalanche diodes.

Avalanche diode including vertical PN junction

A method can be used to manufacture a charge storage cell with a first trench and a second trench in a substrate material. The first trench is filled with a doped material. The second trench is filled with a second trench material. The method includes causing the dopant to diffuse from the first trench to thereby provide a doped region adjacent to the first trench. The material from the first and second trenches is removed and at least one of the trenches is filled with a capacitive deep trench isolation material to provide capacitive deep trench isolation.

An embodiment circuit includes a first source follower configured to be controlled by a voltage at a first node, a photodiode controllably coupled to the first node, and a bias transistor configured to be controlled by a bias voltage. The bias transistor has a first terminal coupled to an output of the first source follower. The circuit additionally includes a storage node controllably coupled to the output of the first source follower, and an amplifier controllably coupled between the storage node and an output line. Also included in the circuit is a controllable switching element configured to couple a second terminal of the bias transistor to a supply voltage in response to a pixel operating in a first mode, and to couple the second terminal of the bias transistor to the output line in response to the pixel operating in a second mode.

Pixel circuit and method of operating the same

A pixel is formed by two or more photodiodes and at least one transfer gate. The transfer gate is configured to transfer charge from each of the photodiodes to a common sense node, such that charge from the photodiodes is combined at the common sense node.

Pixel having a plurality of pinned photodiodes

A pixel arrangement includes a photodiode, a reset transistor configured to be controlled by a reset signal and coupled to a reset input voltage, a transfer gate transistor configured to transfer charge from the photodiode to a node, wherein the transfer gate transistor is controlled by a transfer gate voltage, and a source follower transistor controlled by the voltage on the node and coupled to a source follower voltage. A capacitor is coupled between the node and an input voltage. During a read operation the input voltage is increased to boost the voltage at the node. The increased input voltage may, for example, be one the reset input voltage, said source follower voltage, said transfer gate voltage and a boosting voltage.

Pixel circuit

A pixel has a photodiode configured to be sensitive to light. The pixel is arranged to use back side illumination. The pixel has at least one sample and hold capacitor which is arranged on the side of the photodiode remote from a side on which light impinges. The capacitor overlies at least part of the photodiode.

Pixel and an array of pixels

A keyboard may include a plurality of optical keys. Each optical key may include an optical module and an interaction surface. The optical key may be configured to be activated based on movement of an object on or adjacent the interaction surface. Each movement may produce a different output from the optical module to thereby generate a predetermined input for a device.

Growing community of inventors

Edinburgh, United Kingdom

Laurence Stark