Advanced Silicon Group, Inc.

Lauren Magliozzi

Marcie R Black

Brian P Murphy

Michael Jura

Joanne Forziati

Joanne Yim

Jeff Ray Miller

Jeffrey B Miller

In an aspect of the disclosure, a process for forming nanostructuring on a silicon-containing substrate is provided. The process comprises (a) performing metal-assisted chemical etching on the substrate, (b) performing a clean, including partial or total removal of the metal used to assist the chemical etch, and (c) performing an isotropic or substantially isotropic chemical etch subsequently to the metal-assisted chemical etch of step (a). In an alternative aspect of the disclosure, the process comprises (a) performing metal-assisted chemical etching on the substrate, (b) cleaning the substrate, including removal of some or all of the assisting metal, and (c) performing a chemical etch which results in regularized openings in the silicon substrate.

Metal-assisted etch combined with regularizing etch

Growing community of inventors

Denver, CO, United States of America

Lauren Magliozzi