Atmel Corporation

Laureline Bour

Marc Merandat

Stephane Ricard

Jerome Pratlong

Sylvie Bruneau Vergnes

A method and system for providing an output voltage greater than a voltage provided by a voltage supply in a semiconductor device are disclosed. The method and system include providing at least one oscillator and at least one voltage storage/discharge stage coupled with the at least one oscillator. The oscillator has a frequency that increases as the voltage decreases. The frequency of the oscillator determines a discharge frequency for the at least one voltage storage/discharge stage.

Method and system for providing a charge pump for low voltage applications

A sense amplifier circuit for low voltage applications is provided. In one implementation, the sense amplifier circuit includes a reference current generation circuit coupled to a power supply. The reference current generation circuit generates a reference current that varies linearly with respect to changes in voltages of the power supply. The sense amplifier circuit further includes a sensing circuit coupled to the reference current generation circuit. The sensing circuit senses an amplitude of a current based at least on part on the reference current.

Sense amplifier circuit for low voltage applications

A semiconductor oscillator circuit for an EEPROM high voltage charge pump utilizes a current generating means to charge a first and a second capacitor alternatively. The charging current produced by the current generating means is inversely proportional to the ambient temperature. The charging current is proportional to the supply voltage and consequently, the oscillator frequency output remains constant over a variable voltage supply. Such a constant frequency characteristic makes a low voltage operation possible, but slows down the oscillator frequency as temperature increases. The slowing of oscillator frequency limits the charge pump output voltage and enhances the lifespan of the EEPROM cells.

Oscillator circuit for EEPROM high voltage generator

Program column latch circuitry of nonvolatile memory is provided with read-back capability to verify that data bits have been correctly loaded into the latch circuits and written to the memory cells. The interface between the low voltage latches and the external input and output data paths is provided with opposite-facing tri-state buffers that allow latched data to be read out for comparison and verification. Writing of latched data to memory cells can be verified by the read-back without needing any external RAM.

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Pourrieres, France

Laureline Bour