Taiwan Semiconductor Manufacturing Comp. Ltd.

Laura Nyns

Hui OuYang

Rita Vos

Jean-Luc Everaert

The present disclosure relates to methods for forming a high-k gate dielectric, the methods comprising the steps of providing a semiconductor substrate, cleaning the substrate, performing a thermal treatment, and performing a high-k dielectric material deposition, wherein said thermal treatment step is performed in a non-oxidizing ambient, leading to the formation of a thin interfacial layer between said semiconductor substrate and said high-k dielectric material and wherein the thickness of said thin interfacial layer is less than 10 &#x212b;.

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Geetbets, Belgium

Laura Nyns