Avago Technologies General IP (singapore) Pte. Ltd.

Avago Technologies Fiber IP (singapore) Pte. Ltd

Laura M Giovane

An-Nien Cheng

Chen Ji

Scott W Corzine

Tak Kui Wang

Richard P Schneider

Frank H Peters

Michael Allen Robinson

Ramana M V Murty

Sheila K Mathis

Hao-chung Kuo

Bernhard Ulrich Koelle

Jingyi Wang

An-Nien Chang

An optical mask can be made by providing a transparent mask substrate; depositing a first layer of opaque material, forming an aperture in the first layer; depositing a second layer of transparent material, depositing a third layer of transparent material; patterning the third layer to produce a disc-shaped region, heating the third layer until the disc-shaped region reflows into a lens-shaped region and cross-links, depositing a fourth layer, patterning the fourth layer to produce a cavity extending to the surface of the lens-shaped region, and dry etching the end of the cavity until the second layer develops a shape corresponding to the lens-shaped region.

Device and method for making photomask assembly and photodetector device having light-collecting optical microstructure

Semiconductor devices are described that include a vertical cavity surface emitting laser (VCSEL) and a structure formed on or near the surface of the VCSEL that acts as a filter that benefits high-frequency VCSEL modulation performance.

VCSEL with surface filtering structures

Semiconductor devices and a method for generating light in a semiconductor device are invented and disclosed. The method includes the steps of forming a vertical cavity surface emitting laser including an active region and an oxide layer, the active region separated from the oxide layer and configured to generate light in response to an injected current and introducing an implant layer adjacent and underneath the oxide layer to confine the injected current to a region of the device where charge carriers are combining to generate light. The semiconductor devices include an implant layer between the oxide layer and the active region. The implant layer prevents lateral leakage current from exiting a region of the device where charge carriers are combining to generate light.

Semiconductor devices and methods for generating light

A laser diode driver IC of a transmitter or transceiver is provided with circuitry for monitoring the forward voltage of the laser diode or laser diodes of the transmitter or transceiver to enable the health of the laser diode or diodes to be assessed in real-time.

Monitoring method and device for monitoring a forward voltage of a laser diode in a laser diode driver integrated circuit (IC)

In one aspect, a vertical cavity surface emitting laser (VCSEL) is operable to generate single-mode laser light at an operative wavelength. The VCSEL includes a light-emitting surface and a monolithic longitudinal stack structure. The longitudinal stack structure includes a first mirror, a second mirror, and a cavity region. The cavity region is disposed between the first mirror and the second mirror and includes an active light generation region and a cavity extension region. The longitudinal stack structure further includes an ion-implanted current confinement region. A VCSEL array incorporating the above described VCSEL and a method of making the above-described VCSEL also are described.

Single-mode vertical cavity surface emitting lasers and methods of making the same

Using lateral physical modulation, the optical properties of VCSELs can be stabilized and controlled by spatially varying the characteristics of the device material. This results in stabilization of the linewidth, the numerical aperture, the near and far field, as a function of bias and temperature. A VCSEL includes a substrate, an active region sandwiched between an upper and lower distributed Bragg reflector (DBRs), and electrical contacts. A light emission property e.g. the index of refraction, may be varied by patterning or texturing the surface of the substrate prior to growth of the epitaxial DBR layers or at least one layer of either the upper or lower DBRs, or by inserting a non-planar layer.

Growing community of inventors

Sunnyvale, CA, United States of America

Laura M Giovane