Mapper Lithography IP B.v.

Asml Netherlands B.v.

Laura Dinu-Gürtler

Eric Petrus Hogervorst

Marco Jan-Jaco Wieland

Stijn Willem Herman Karel Steenbrink

Willem Henk Urbanus

Jurgen Van Soest

The disclosed embodiments relate to a charged particle source module for generating and emitting a charged particle beam, such as an electron beam, comprising: a frame including a first frame part, a second frame part, and one or more rigid support members which are arranged between said first frame part and said second frame part; a charged particle source arrangement for generating a charged particle beam, such as an electron beam, wherein said charged particle source arrangement, such as an electron source, is arranged at said second frame part; and a power connecting assembly arranged at said first frame part, wherein said charged particle source arrangement is electrically connected to said connecting assembly via electrical wiring.

Charged particle source module

The invention relates to a cathode arrangement comprising:

Focusing electrode for cathode arrangement, electron gun, and lithography system comprising such electron gun

Cathode arrangement, electron gun, and lithography system comprising such electron gun

A charged particle lithography system for transferring a pattern onto the surface of a target, comprising a source for generating a charged particle beam, a first chamber housing the source, a collimating system for collimating the charged particle beam, a second chamber housing the collimating system, and a first aperture array element for generating a plurality of charged particle subbeams from the collimated charged particle beam.

Charged particle lithography system with intermediate chamber

A charged particle lithography system for transferring a pattern onto the surface of a target, comprising a main vacuum chamber, a source chamber and an intermediate chamber, both located in the main vacuum chamber, a beam generator for generating a charged particle beam, the beam generator located in the source chamber, and a first aperture array element for generating a plurality of charged particle beamlets from the beam, the first aperture array element located in the intermediate chamber. The system is adapted for maintaining a first pressure in the main vacuum chamber, a second pressure in the intermediate chamber, and a third pressure in the source chamber, and wherein the first pressure is lower than an ambient pressure, the second pressure is lower than the first pressure, and the third pressure is lower than the second pressure.

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Delft, Netherlands

Laura Dinu-Gürtler