Siliconix Technology C. V.

Vishay-siliconix

Laura Bellemo

Rossano Carta

Luigi Merlin

Giovanni Richieri

A silicon carbide device includes at least one power electrode on a surface thereof, a solderable contract formed on the power electrode, and at least one passivation layer that surrounds the solderable contact but is spaced from the solderable contract, thereby forming a gap.

Solderable top metal for silicon carbide semiconductor devices

A SiC JFET that includes a plurality of trenches formed in a SiC semiconductor body of one conductivity each trench having a region of another conductivity formed in the bottom and sidewalls thereof.

Power semiconductor switch with plurality of trenches

A silicon carbide device has a termination region that includes a mesa region that links the termination region to an active area of the device and that includes one or more trenches.

Termination for SiC trench devices

An SiC Schottky diode die or a Si Schottky diode die is mounted with its epitaxial anode surface connected to the best heat sink surface in the device package. This produces a substantial increase in the surge current capability of the device.

Growing community of inventors

Turin, Italy

Laura Bellemo