International Business Machines Corporation

Laura B Rothman

John L Mauer, Iv

Joseph S Logan

Geraldine C Schwartz

Charles L Standley

James F White

Paul A Totta

Alwin E Michel

Reginald F Lever

Use of a dual composite mask for a lift-off multi-layered structure process in which a base component layer acts as an etch stop for reactive ion etching of overlying layers.

Planar multi-level metal process with built-in etch stop

A method for forming thin film patterns in the fabrication of integrated circuits utilizing a lift-off mask in an inverse vertical relationship with the desired metal film. The method involves the preliminary blanket deposition of the metal in-point, followed by a coating of a patterned lift-off mask over which is blanket coated a dry-etch resistant material with subsequent removal of the lift-off mask, and dry etching of the exposed metal film. In one embodiment the dry-etch mask can comprise a diverse metal layer when a dry-etch ambient is employed which is passive to the diverse metal. In another embodiment, where dry etch ambients are employed which are corrosive to the diverse metal which is desired in the final structure, it can be covered with a blanket layer of any convenient dry-etch resistant material, such as magnesium oxide, prior to removal of the lift-off mask. This method has effective application in the fabrication of Schottky barrier diodes, transistors, and other electronic components or discrete and integrated devices requiring high quality metal to semiconductor junctions or interfaces.

Hybrid process for SBD metallurgies

A planar deep oxide isolation process for providing deep wide silicon dioxide filled trenches in the planar surface of a silicon semiconductor substrate, said process comprising the steps:

Planar deep oxide isolation process utilizing resin glass and E-beam

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Sherman, CT, United States of America

Laura B Rothman